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Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

  • Proceedings of the Conference Dedicated to O. V. Losev (1903–1942) (Nizhni Novgorod, Russia, March 17–20, 2003)
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Abstract

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in quantum dots, as determined from the oscillation period, is 40–50 meV depending on the Ge dot size.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    L. V. Sokolov, A. S. Deryabin, A. I. Yakimov, O. P. Pchelyakov & A. V. Dvurechenskii

  2. Tomsk State University, Tomsk, 634050, Russia

    L. V. Sokolov

Authors
  1. L. V. Sokolov
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  2. A. S. Deryabin
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  3. A. I. Yakimov
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  4. O. P. Pchelyakov
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  5. A. V. Dvurechenskii
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 91–93.

Original Russian Text Copyright © 2004 by Sokolov, Deryabin, Yakimov, Pchelyakov, Dvurechenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \).

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Sokolov, L.V., Deryabin, A.S., Yakimov, A.I. et al. Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis. Phys. Solid State 46, 89–91 (2004). https://doi.org/10.1134/1.1641929

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  • DOI: https://doi.org/10.1134/1.1641929

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