Abstract
Magnetotransport characterization of field-effect transistors in view of their application as resonant detectors of THz radiation is presented. Three groups of different transistors based on GaAs/GaAlAs or GaInAs/AlGaAs heterostructures are investigated at liquid-helium temperatures and for magnetic fields of up to 14 T. The magnetic-field dependence of the transistor resistance is used for evaluation of the electron density and mobility in the transistor channel. The electron mobility and concentration determined from magnetotransport measurements are used for the interpretation of recently observed resonant detection of terahertz radiation in 0.15 µm gate length GaAs transistors and for the determination of the parameters of other field-effect transistors processed for resonant and voltage tunable detection of THz radiation.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. C. Samuels, D. L. Woolard, T. Globus, et al., in WOFE-02 Proceedings, Yoon Soo Park, Ed. by M. S. Shur and William Tang (2002).
B. Ferguson and X.-C. Zhang, Nature Mater. 1, 26 (2002).
M. Kroug, S. Cherednichenko, H. Merkel, et al., IEEE Trans. Appl. Supercond. 11, 962 (2001).
P. J. Burke, R. J. Schoelkopf, D. E. Prober, et al., J. Appl. Phys. 85, 1644 (1999).
B. S. Karasik, W. R. McGrath, M. E. Gershenson, and A. V. Sergeev, J. Appl. Phys. 87, 7586 (2000).
T. W. Crow, R. J. Mattauch, R. M. Weikle, and U. V. Bhapkar, in Compound Semiconductor Electronics, Ed. by M. Shur (World Sci., Singapore, 1996), p. 209.
S. M. Marazita, W. L. Bishop, J. L. Hesler, et al., IEEE Trans. Electron Devices 47, 1152 (2000).
E. E. Haller and J. W. Beeman, in Proceedings of Far-IR, Submm and mm Detector Technology Workshop, Monterey, CA (2002) (in press).
G. E. Stillman, C. M. Wolfe, and J. O. Dimmock, Solid State Commun. 7, 5 (1969).
W. Knap, J. Lusakowski, K. Karpierz, et al., J. Appl. Phys. 72, 680 (1992).
For review see M. Dyakonov and M. S. Shur, in Terahertz Sources and Systems}, Ed. by R. E. Miles, P. Harrison, and D. Lippens} (Kluwer Academic, Dordrecht}, 2001}), p.
M. Dyakonov and M. S. Shur, Phys. Rev. Lett. 71, 2465 (1993); IEEE Trans. Electron Devices 43, 380 (1996); in Proceedings of 22nd International Symposium on GaAs and Related Compounds (1996), Inst. Conf. Ser., No. 145, Chap. 5, p. 785.
W. Knap, Y. Deng, S. Rumyantsev, et al., Appl. Phys. Lett. 80, 3433 (2002).
W. Knap, Y. Deng, S. Rumyantsev, and M. S. Shur, Appl. Phys. Lett. 81, 4637 (2002).
X. G. Peralta, S. J. Allen, M. C. Wanke, et al., Appl. Phys. Lett. 81, 1627 (2002).
W. Knap, V. Kachorovskii, Y. Deng, et al., J. Appl. Phys. 91, 9346 (2002).
A. A. Grinberg and M. S. Shur, J. Appl. Phys. 58, 382 (1985).
Author information
Authors and Affiliations
Additional information
From Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 138–145.
Original English Text Copyright © 2004 by Lusakowski, Knap, Dyakonova, Kaminska, Piotrowska, Golaszewska, Shur, Smirnov, Gavrilenko, Antonov, Morozov.
This article was submitted by the authors in English.
Rights and permissions
About this article
Cite this article
Lusakowski, J., Knap, W., Dyakonova, N. et al. Magnetotransport characterization of THz detectors based on plasma oscillations in submicron field-effect transistors. Phys. Solid State 46, 138–145 (2004). https://doi.org/10.1134/1.1641940
Issue Date:
DOI: https://doi.org/10.1134/1.1641940