Proceedings of the 12th International School on Condensed Matter Physics: Contemporary Trends in Condensed Matter Physics and Technology 1–6 September 2002, Varna, Bulgaria Preface Pages: 1 - 1
Opening Address by Professor Naum Yakimoff Scientific Secretary General Bulgarian Academy of Sciences N. Yakimoff Introduction Pages: 3 - 3
The Gueorgi Nadjakov Lecture Negative-U defects in chalcogenide glasses: elusive or non-existent? G. J. AdriaenssensN. Qamhieh OriginalPaper Pages: 605 - 609
Computer-assisted study of carrier thermalization by hopping in disordered semiconductors J. M. Marshall OriginalPaper Pages: 611 - 614
Spatial and energetic profiling of defects in thin-film silicon S. ReynoldsC. MainR. Brüggemann OriginalPaper Pages: 615 - 619
Microcrystalline silicon prepared with hot-wire CVD F. FingerS. KleinA. L. Baia Neto OriginalPaper Pages: 621 - 624
A comparison of microcrystalline silicon prepared by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition: electronic and device properties R. CariusT. MerdzhanovaO. Vetterl OriginalPaper Pages: 625 - 628
Photoconductivity studies of n-type hydrogenated amorphous silicon and microcrystalline silicon R. Brüggemann OriginalPaper Pages: 629 - 633
The impact of the structural dimensions and optical properties of bulk material on the optical performance of diffraction microstructures: crystalline silicon gratings and applications S. Hava OriginalPaper Pages: 641 - 644
Advanced patterning techniques for nanodevice fabrication I. KosticR. AndokA. Ritomsky OriginalPaper Pages: 645 - 648
Thick LPE layers of InAs1−x Sb x for 3–5 μm optoelectronic applications A. S. PopovS. L. TzenevaK. S. Varblianska OriginalPaper Pages: 649 - 652
Field-emission characteristics of carbon nanotubes and their applications in photonic devices A. Vaseashta OriginalPaper Pages: 653 - 656
Optical activation of Er ions by Si nanocrystals in films synthesized by sol–gel chemistry and ion implantation J. C. PivinM. Jimenez De CastroM. Sendova-Vassileva OriginalPaper Pages: 661 - 664
Application problems of high-current superconducting materials V. Kovachev OriginalPaper Pages: 665 - 669
Leakage current in thin-films Ta2O5 on Si – is it a limiting factor for nanoscale dynamic memories? E. AtanassovaA. Paskaleva OriginalPaper Pages: 671 - 675
Chalcogenide glasses as prospective materials for optical memories and optical data storage A. V. KolobovJ. Tominaga OriginalPaper Pages: 677 - 680
The influence of generation and transport processes in the constant photocurrent method C. MainS. ReynoldsA. Merazga OriginalPaper Pages: 681 - 684
Influence of potential fluctuations on photoconductivity in a-Si : H K. Shimakawa OriginalPaper Pages: 685 - 688
Conductance fluctuations in a-Si : H: effects of alloying and device structure S. O. KasapMehmet GünesS. Guha OriginalPaper Pages: 693 - 696
Nanosecond QFRS study of photoluminescence in amorphous semiconductors T. Aoki OriginalPaper Pages: 697 - 701
Potential fluctuations and metastabilities in hydrogenated amorphous silicon S. C. Agarwal OriginalPaper Pages: 703 - 706
On the light absorption in amorphous semiconductors S. D. BaranovskiiK. KoharyS. Yamasaki OriginalPaper Pages: 707 - 710
Fabrication technology of high-frequency and high-power durable surface acoustic wave devices for mobile terminals Jun Yamada OriginalPaper Pages: 711 - 715
The aluminum/polythiophene interface: a case study in molecular electronics and computational chemistry J. M. Maud OriginalPaper Pages: 717 - 720
Some results and open problems in research on low-dimensional organic conductors V. Celebonovic OriginalPaper Pages: 721 - 724
Nonlinear optics in materials: integral transformation of optical four-wave mixing spectra N. KirovG. B. Hadjichristov OriginalPaper Pages: 725 - 728
Photoconductivity spectroscopy in hydrogenated microcrystalline silicon thin films M. GüneşD. AkdaşF. Finger OriginalPaper Pages: 729 - 730
Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films Mehmet GünesçR. E. JohansonA. Lambertz OriginalPaper Pages: 731 - 732
Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF) M. SerinN. HarderR. Carius OriginalPaper Pages: 733 - 734
Analysis of the structural parameters of an a-Si : H n+-i-n+ structure by numerical simulations A. ErayG. Nobile OriginalPaper Pages: 735 - 736
Electrical and optical properties of glow-discharge a-SiO x : H (x<2) A. BacioğluA. O. Kodolbaşö. öktü OriginalPaper Pages: 737 - 738
Annealing behavior of light-induced metastable defects in a-Si1−x C x : H A. O. Kodolbasçö. öktü OriginalPaper Pages: 739 - 740
Preferential growth of μc-Ge : H along the crystallographic axes of Si and Ge substrates by ECR plasma CVD S. KobayashiT. ShimizuT. Asakawa OriginalPaper Pages: 741 - 743
Transport properties of structures containing a-Si : H : Er D. Dimova-MalinovskaM. Sendova-VassilevaJ. M. Marshall OriginalPaper Pages: 745 - 746
Polycrystalline silicon thin films obtained by metal-induced crystallization D. Dimova-MalinovskaO. AngelovA. Vaseashta OriginalPaper Pages: 747 - 748
Re-examination of the post-transit photocurrents in expanding-thermal-plasma-grown a-Si : H M. BrinzaG. J. Adriaenssens OriginalPaper Pages: 749 - 750
Effect of film thickness on hydrogen content in a-Si : H B. PantchevP. DaneshJ. Baran OriginalPaper Pages: 751 - 752
Raman study of ion-implanted hydrogenated amorphous silicon P. DaneshB. PantchevB. Schmidt OriginalPaper Pages: 753 - 754
Electrochromic behavior of CVD molybdenum oxide and Mo-W mixed-oxide thin films T. IvanovaK. A. GeshevaE. Tzvetkova OriginalPaper Pages: 755 - 756
Deposition and dielectric properties of (Al2O3) x (TiO2)1−x thin films P. VitanovA. HarizanovaK. Ivanova OriginalPaper Pages: 757 - 758
Thin ZrO2 sol–gel films for catalytic applications E. KrumovJ. DikovaL. D. Laude OriginalPaper Pages: 759 - 760
Influence of Ga on the luminescence efficiency of Er-doped Ge–S–Ga glasses Z. G. IvanovaZ. AnevaV. S. Vassilev OriginalPaper Pages: 761 - 762
Growth of Pr0.7Sr0.28Pb0.02MnO3 single crystals and determination of the phase transition temperature K. KalaydjievM. GospodinovM. Bushev OriginalPaper Pages: 763 - 764
Hall-effect studies of Pr0.7Sr0.3MnO3 D. DimitrovV. LovchinovL. Vassilev OriginalPaper Pages: 765 - 766
Sublimation epitaxy of AlN layers on 4H-SiC depending on the type of crucible M. BeshkovaZ. ZakharievR. Yakimova OriginalPaper Pages: 767 - 768
Study of the surfaces of CVD-WO3 films, by atomic force microscopy and spectroscopic ellipsometry R. E. TannerA. SzekeresK. Gesheva OriginalPaper Pages: 769 - 770
Effect of carrier concentration on the microhardness of GaN layers S. EvtimovaB. ArnaudovM. Heuken OriginalPaper Pages: 771 - 772
