Investigation of the transport properties of microcrystalline silicon by time-of-flight (TOF)

Abstract

The transport properties of microcrystalline silicon have been studied by the time-of-flight technique on a 6.3-μm thick n-i-p solar cell illuminated from the p-side (n-side) to obtain electron (hole) current transients. The transients exhibit dispersive behavior. At room temperature, drift-mobility values of about 2–4 cm² V⁻¹ s⁻¹ and 2 cm² V⁻¹ s⁻¹ were deduced for electrons and holes, respectively. The dispersion parameters α₁ and α₂, as determined from the pre- and post-transit slopes of the current transients were similar to those for a-Si : H.