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Deposition and dielectric properties of (Al2O3) x (TiO2)1−x thin films

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Abstract

The motivation for this study was to obtain an alloy system (Al2O3) x (TiO2)1−x , that is thermodynamically stable, in direct contact with Si and possessing a high dielectric constant. In the present study, (Al2O3) x (TiO)1−x films were investigated. They were prepared by spin coating from a sol solution, with additional thermal annealing. The chemical composition and stoichiometry of the films was studied by X-ray photoelectron spectroscopy. For the electrical characteristics, MIS capacitors were fabricated. The determined relative dielectric constants were larger than the reported values for pure Al2O3, due to the presence of TiO2.

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Authors and Affiliations

  1. Bulgarian Academy of Sciences, Central Laboratory for Solar Energy and New Energy Sources, Blvd Tzarigradsko Chaussee 72, 1784, Sofia, Bulgaria

    P. Vitanov, A. Harizanova, T. Ivanova & K. Ivanova

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  1. P. Vitanov
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  2. A. Harizanova
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  3. T. Ivanova
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  4. K. Ivanova
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Vitanov, P., Harizanova, A., Ivanova, T. et al. Deposition and dielectric properties of (Al2O3) x (TiO2)1−x thin films. Journal of Materials Science: Materials in Electronics 14, 757–758 (2003). https://doi.org/10.1023/A:1026124414333

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  • DOI: https://doi.org/10.1023/A:1026124414333

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