Abstract
The interpretation of post-transit photocurrents in a time-of-flight experiment, in terms of the underlying density of localized gap states in the sample, is questioned for the case of previously examined hydrogenated amorphous silicon cells prepared by the expanding thermal plasma technique. Part of the observed current is not generated by re-emission of trapped photo-generated charge and should, therefore, not be used for density-of-states calculations.
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Brinza, M., Adriaenssens, G.J. Re-examination of the post-transit photocurrents in expanding-thermal-plasma-grown a-Si : H. Journal of Materials Science: Materials in Electronics 14, 749–750 (2003). https://doi.org/10.1023/A:1026116112515
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DOI: https://doi.org/10.1023/A:1026116112515