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Analysis of the structural parameters of an a-Si : H n+-i-n+ structure by numerical simulations

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Abstract

In this study, we discuss measurements of the J–V characteristics of an a-Si : H n+-i-n+ structure, and the results of numerical simulation using the AMPS-1D simulation program. Application of the AMPS simulation model to the sample structures considered allows us to determine the structural properties of the a-Si : H n+-i-n+ structure. The one-dimensional simulation program was examined in n+-i-n+ structures with different qualities and thicknesses of the i-layer. We find that the n+/i interface is more abrupt for a device with a high density of states (DOS), resulting in high values of the activation energy (E act). In contrast, thin samples of good quality (low DOS) give low values of E act. Analysis by numerical modeling confirms the experimental results.

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Authors and Affiliations

  1. Department of Physics Engineering, Hacettepe University, Ankara, 06532, Turkey

    A. Eray

  2. ENEA Research Centre, Loc. Granatello, P.O.B. 32, 80055, Portici (NA), Italy

    G. Nobile

Authors
  1. A. Eray
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  2. G. Nobile
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Eray, A., Nobile, G. Analysis of the structural parameters of an a-Si : H n+-i-n+ structure by numerical simulations. Journal of Materials Science: Materials in Electronics 14, 735–736 (2003). https://doi.org/10.1023/A:1026103809789

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