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On the light absorption in amorphous semiconductors

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Abstract

Recent measurements of optical absorption in doped amorphous semiconductors (a-Si : H and a-Ge : H) have revealed that long-range potential fluctuations play a decisive role in the absorption mechanism. The theory of such effects was initially developed for crystalline semiconductors, and it is usually not applied in the appropriate form for the interpretation of experimental data in amorphous materials. We use this theory in the analysis of optical-absorption data for amorphous semiconductors, and show its quantitative agreement with experimental results.

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Authors and Affiliations

  1. Department of Physics and Material Sciences Center, Philipps-University Marburg, D-35032, Marburg, Germany

    S. D. Baranovskii, K. Kohary & P. Thomas

  2. AIST (ASRC), AIST Tsukuba-Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8562, Japan

    S. Yamasaki

Authors
  1. S. D. Baranovskii
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  2. K. Kohary
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  3. P. Thomas
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  4. S. Yamasaki
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Baranovskii, S.D., Kohary, K., Thomas, P. et al. On the light absorption in amorphous semiconductors. Journal of Materials Science: Materials in Electronics 14, 707–710 (2003). https://doi.org/10.1023/A:1026135222085

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