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Effect of film thickness on hydrogen content in a-Si : H

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Abstract

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.

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Authors and Affiliations

  1. Bulgarian Academy of Sciences, Institute of Solid State Physics, Blvd Tzarigradsko Chaussee 72, 1784, Sofia, Bulgaria

    B. Pantchev, P. Danesh & K. Antonova

  2. Research Center Rossendorf Inc., Institute of Ion Beam Physics and Materials Research, D-01314, Dresden, Germany

    B. Schmidt & D. Grambole

  3. Polish Academy of Sciences, Institute of Low Temperature and Structural Research, Okolna 2, Wroclaw 2, 50-950, Poland

    J. Baran

Authors
  1. B. Pantchev
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  2. P. Danesh
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  3. K. Antonova
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  4. B. Schmidt
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  5. D. Grambole
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  6. J. Baran
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Pantchev, B., Danesh, P., Antonova, K. et al. Effect of film thickness on hydrogen content in a-Si : H. Journal of Materials Science: Materials in Electronics 14, 751–752 (2003). https://doi.org/10.1023/A:1026168129354

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  • DOI: https://doi.org/10.1023/A:1026168129354

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