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Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films

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Abstract

Coplanar conductance fluctuations or excess noise of undoped hydrogenated microcrystalline silicon (μc-Si : H) thin films grown by VHF-PECVD from silane–hydrogen mixtures with silane concentrations from 2% to 6% have been studied between room temperature and 470 K. We report that undoped μc-Si : H thin films show similar noise-power spectra to those of undoped a-Si : H films in a coplanar sample geometry. At lower temperatures, the noise with the slope α=0.60±0.07 and at higher temperatures, the noise with the slope α close to unity dominate the spectrum. The noise magnitude decreases with decreasing silane concentration and becomes strongly temperature dependent with increased crystallinity.

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Authors and Affiliations

  1. Department of Physics, Izmir Institute of Technology, Gülbahcçe Kampusü, Urla, Izmir, TR-35437, Turkey

    Mehmet Günesç

  2. Department of Electrical Engineering, University of Saskatchewan, Saskatoon, S7N 5A9, Canada

    R. E. Johanson & S. O. Kasap

  3. Institut für Photovoltaik, Forschungszentrum Jülich GmbH, 52425, Jülich, Germany

    F. Finger & A. Lambertz

Authors
  1. Mehmet Günesç
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  2. R. E. Johanson
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  3. S. O. Kasap
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  4. F. Finger
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  5. A. Lambertz
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Günesç, M., Johanson, R.E., Kasap, S.O. et al. Conductance fluctuations in VHF-PECVD grown hydrogenated microcrystalline silicon thin films. Journal of Materials Science: Materials in Electronics 14, 731–732 (2003). https://doi.org/10.1023/A:1026199608881

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  • DOI: https://doi.org/10.1023/A:1026199608881

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