Abstract
The effect of silicon and hydrogen ion implantations on the structural properties of hydrogenated amorphous silicon films was studied by means of Raman spectroscopy, with the aim of revealing the influence of hydrogen atoms inserted into the silicon matrix on its short-range order. To separate the implantation-induced increase in the structural disorder from the effect of the implanted hydrogen, the implantation doses of silicon and hydrogen ions were selected to create closely similar numbers of host-atom displacements. The results obtained suggest that the presence of hydrogen in amorphous silicon reduces the structural disorder related to variations in the silicon bond length, but affect the bond-angle deviations to a lesser extent.
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B. Pantchev and P. Danesh (to be published).
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Danesh, P., Pantchev, B., Liarokapis, E. et al. Raman study of ion-implanted hydrogenated amorphous silicon. Journal of Materials Science: Materials in Electronics 14, 753–754 (2003). https://doi.org/10.1023/A:1026120213424
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DOI: https://doi.org/10.1023/A:1026120213424