Abstract
A calculation of the In–As–Sb phase diagram in the low-temperature range 300–450 °C has been made. Liquid phase epitaxy was performed to grow InAs1−x Sb x layers on InAs substrates at temperatures as low as 300 °C. High-quality layers were grown on InAs with x up to 0.26. Scanning electron microscopy (SEM) X-ray microprobe compositional analysis was performed and Raman scattering proved the layer homogeneity and crystal perfection. Pd/Ge/Au ohmic contacts (OC) to InAsSb LPE solid solutions with a low Sb content, doped with group IV elements (Sn and Si) were thermally evaporated. The incorporation of Ge and the redistribution of Si and Sn on the groups III and V vacancies after annealing at Tann=250–400 °C governs the contact behavior. The C–V characteristics and photosensitivity of the p-InAs/n-InAsSb heterostructures confirmed their device applicability in the 3–5 μm spectral range. The OC deposited on surfaces pre-treated with (NH4)2S solid solution exhibited improved ohmic behavior.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
G. B. Stringfellow and P. E. Greene, J. Electrochem. Soc. 118 (1971) 805.
A. M. Andrews, D. G. Cheung, E. R. Gertner and J. T. Longo, J. Vac. Sci. Techol. 13 (1976) 961.
N. Bert and M. Z. Zhingarev, Cryst. Res. Technol. 15 (1980) 787.
G. B. Stringfellow and P. E. Greene, J. Phys. Chem. Solids 30 (1969) 1779.
H. Mani, A. Joullie, J. Bhan, C. Schiller and J. Primot, J. Electron. Mater. 16 (1987) 289.
J. L. Zyskind, A. K. Srivastava, J. C. Dewinter, M. A. Polack and J. W. Sulhoff, J. Appl. Phys. 61 (1987) 2898.
L. S. Darken, Trans. Met. Soc. AIME 239 (1967) 80.
L. J. Vieland, Acta Metall. 11 (1963) 137.
M. B. Panish, J. Appl. Phys. 44 (1973) 2667.
A. S. Jourdan, J. Electrochem. Soc. 119 (1972) 123.
A. S. Popov, A. M. Koinova and S. L. Tzeneva, J. Cryst. Growth 186 (1997) 338.
A. Popov, A. Koinova, E. Trifonova and S. Tzeneva, Cryst. Res. Technol. 33 (1998) 737.
A. Popov, A. Koinova and S. Tzeneva, Reported at the Nineteenth Bulgarian-Greek Symposium on Semiconductor Physics 15–16 December 2000, Sofia, Bulgaria.
E. D. Marshall, W. X. Chen, C. S. Wu, S. S. Lan and T. F. Kuech, Appl. Phys. Lett. 47 (1985) 298.
C. J. Palmstron, S. A. Schwarz, E. Yablonovitch, J. P. Harbison, C. L. Schwartz, L. T. Florez, T. J. Gmitter, E. D. Marshall and S. S. Lan, J. Appl. Phys. 67 (1990) 334.
A. Vogt, H. L. Hartnagel, G. Miehe, H. Fuess and J. Schmits, J. Vac. Sci. Technol. B 14 (1996) 3514.
A. Vogt, A. Simon, H. L. Hartnagel, J. Schikorn, V. Buschmann, M. Rodewald, H. Fuess, S. Fascko, C. Koerdt and H. Kurz, J. Appl. Phys. 83 (1998) 7715.
K. Varblianska, P. Gardev and P. Gladkov Proceedings of the Nineteenth Bulgarian-Greek Symposium on Semiconductor Physics and Technology, Sofia 2000, to be published.
K. Varblianska, K. Tzenev and T. Kotsinov, Phys. Status Solidi A 163 (1997) 387.
Z. L. Yang, X. M. Ding, H. T. Hu, Z. S. Li, J. S. Yang, X. Y. Miao, X. Y. Chen, X. A. Cao and X. Y. Hou, Appl. Phys. Lett. 71 (1997) 3081.
I. A. Andreev, E. V. Kunitsyna, V. M. Lantratov, T. V. L'Vova, M. P. Mikhailova and Yu. P. Yakovlev, Semiconductors 31 (1997) 556.
M. Perotin, P. Coudray, L. Gouskov, H. Luquet, C. Llinares, J. J. Bonnet, L. Soonckidt and B. Lambert J. Electron. Mater. 23 (1994) 7.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Popov, A.S., Tzeneva, S.L., Koinova, A.M. et al. Thick LPE layers of InAs1−x Sb x for 3–5 μm optoelectronic applications. Journal of Materials Science: Materials in Electronics 14, 649–652 (2003). https://doi.org/10.1023/A:1026102314816
Issue Date:
DOI: https://doi.org/10.1023/A:1026102314816