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Optical activation of Er ions by Si nanocrystals in films synthesized by sol–gel chemistry and ion implantation

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Abstract

The sensitization of the infrared luminescence of Er ions by Si clusters is studied in oxide films derived from tetraethoxysilane and triethoxysilane gels, doped chemically or by ion implantation with Er and/or Si. No quenching of the luminescence by impurities and structural defects is observed with respect to ion-implanted silica, and a maximum enhancement is observed in the SiO1.5 suboxide formed from triethoxysilane. The segregation of erbium silicide or oxide, depending on the synthesis procedure, deactivates the Er ions when their concentration exceeds 1 at % or the temperature of annealing is above 1050 °C.

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Authors and Affiliations

  1. CSNSM-IN2P3, Bâtiment 108, 91405, Orsay Campus, France

    J. C. Pivin

  2. Instittuto de Optica Daza de Valdés, CSIC, Serrano 121, 28006, Madrid, Spain

    M. Jimenez De Castro

  3. Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tsarigradsko, 1784, Sofia, Bulgaria

    M. Sendova-Vassileva

Authors
  1. J. C. Pivin
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  2. M. Jimenez De Castro
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  3. M. Sendova-Vassileva
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Pivin, J.C., Jimenez De Castro, M. & Sendova-Vassileva, M. Optical activation of Er ions by Si nanocrystals in films synthesized by sol–gel chemistry and ion implantation. Journal of Materials Science: Materials in Electronics 14, 661–664 (2003). https://doi.org/10.1023/A:1026110516633

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  • DOI: https://doi.org/10.1023/A:1026110516633

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