Modeling of Extended Defects in Silicon M. E. LawK. S. JonesJ. W. Xu OriginalPaper 15 February 2011 Pages: 3 - 10
Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers A. ClaverieC. BonafosD. Mathiot OriginalPaper 15 February 2011 Pages: 11 - 22
Transient Enhanced Diffusion of Boron in Silicon: The Interstitial Flux T. W. SimpsonR. D. GoldbergJ.-M. Baribeau OriginalPaper 15 February 2011 Pages: 23 - 28
Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si V. KrishnamoorthyD. VenablesB. Freer OriginalPaper 15 February 2011 Pages: 29 - 34
Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants Alp H. GencerScott T. Dunham OriginalPaper 15 February 2011 Pages: 35 - 40
Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon M. B. HuangU. MylerI. V. Mitchell OriginalPaper 15 February 2011 Pages: 41 - 46
Raman Spectroscopy of Ion-Implanted Silicon David D. TuschelJames P. Lavine OriginalPaper 15 February 2011 Pages: 47 - 52
Defect Diffusion During Annealing of Low-Energy Ion-Implanted Silicon P. J. BedrossianM.-J. CaturlaT. De La Diaz Rubia OriginalPaper 15 February 2011 Pages: 53 - 58
Ab Initio Pseudopotential Calculations of Carbon Impurities in Si Jing ZhuT. De La Diaz RubiaChristian Mailhiot OriginalPaper 15 February 2011 Pages: 59 - 64
Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon S. SolmiS. Valmorri OriginalPaper 15 February 2011 Pages: 65 - 70
Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena F. PrioloV. PriviteraS. Libertino OriginalPaper 15 February 2011 Pages: 71 - 82
The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si S. LibertinoS. CoffaF. Priolo OriginalPaper 15 February 2011 Pages: 83 - 88
Diffuse X-Ray Scattering Study of Defects Created by KeV Ion Implants in Si P. J. PartykaR. S. AverbackM. Tang OriginalPaper 15 February 2011 Pages: 89 - 94
Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon M. WatanabeT. KitanoT. Mikado OriginalPaper 15 February 2011 Pages: 95 - 100
Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach S. TianM. MorrisA. F. Tasch OriginalPaper 15 February 2011 Pages: 101 - 106
An Electronic Stopping Power Model in Single-Crystal Silicon from a Few KeV to Several MeV S. J. MorrisB. ObradovicL. Rubin OriginalPaper 15 February 2011 Pages: 107 - 112
Heat and Mass Transport Induced by Collision Cascades A. CarolM. AlurraldeM. Caro OriginalPaper 15 February 2011 Pages: 113 - 118
Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si D. DanailovD. KarpuzovM. Victoria OriginalPaper 15 February 2011 Pages: 119 - 124
Dose Rate Effects During Damage Accumulation in Silicon M. J. CaturlaT. Diaz de la Rubia OriginalPaper 15 February 2011 Pages: 125 - 129
Charge State Defect Engineering of Silicon During Ion Implantation R. A. BrownJ. RaviC. W. White OriginalPaper 15 February 2011 Pages: 131 - 136
Kinetics of Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Buried Amorphous Si Layers J. C. McCallum OriginalPaper 15 February 2011 Pages: 137 - 142
Annealing Properties of Defects in BF2+ Implanted Silicon T. KitanoM. WatanabeT. Mikado OriginalPaper 15 February 2011 Pages: 143 - 148
Competition Between Gettering by Implantation-Induced Cavities in Silicon and Internal Gettering Associated with SiO2 Precipitation S. A. McHugoE. R. WeberG. A. Petersen OriginalPaper 15 February 2011 Pages: 149 - 154
Secondary Defect Formation and Gettering in Mev Self-Implanted Silicon R. A. BrownO. KononchukF. Gonzalez OriginalPaper 15 February 2011 Pages: 155 - 160
Electronic Structure and Gate Capacitance-Voltage Characteristics of MBE Silicon δ-Fets J. E. ManzoliO. Hipólito OriginalPaper 15 February 2011 Pages: 161 - 166
Ion Beam Synthesis of SiC/Si Heterostructures by MEVVA Implantation S. P. WongL. C. HoR. W. M. Kwok OriginalPaper 15 February 2011 Pages: 167 - 172
SiC Precipitate Formation During High Dose Carbon Implantation Into Silicon J. K. N. LindnerK. VolzB. Stritzker OriginalPaper 15 February 2011 Pages: 173 - 178
Conductive Tungsten-Based Layers Synthesized by Ion Implantation Into 6H-Silicon Carbide H. WeishartJ. schöneichW. Skorupa OriginalPaper 15 February 2011 Pages: 179 - 184
Vacancy-Type Defects in Electron and Proton Irradiated II–VI Compounds S. BrunnerW. PuffH. Baumann OriginalPaper 15 February 2011 Pages: 185 - 190
Elevated Temperature Implantation of GaAs With Si Ions R. A. BhownJ. S. Williams OriginalPaper 15 February 2011 Pages: 191 - 196
Amorphization Mechanisms in AlxGa1−xAs B. W. LagowB. A. TurkotJ. J. Coleman OriginalPaper 15 February 2011 Pages: 197 - 202
Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers P. WernerU. GöseleH. Kohda OriginalPaper 15 February 2011 Pages: 203 - 208
Interaction of Cavities and Dislocations in Semiconductors D. M. FollstaedtS. M. MyersJ. Han OriginalPaper 15 February 2011 Pages: 209 - 214
Germanium Redistribution Phenomena in the Synthesis of SiGe Layers C. J. PatelJ. B. Butcher OriginalPaper 15 February 2011 Pages: 215 - 220
Ion Beam Modification of Cluster-Covered Silicon Surfaces O. V. GulkoM. T. Zinke-Allmang OriginalPaper 15 February 2011 Pages: 221 - 226
Microstructural Observation of Focused Ion Beam Modification of Ni Silicide/Si Thin Films Miyoko TanakaKazuo FuruyaTetsuya Saito OriginalPaper 15 February 2011 Pages: 227 - 232
Growth of Ge1−xCx, Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method H. ShibataS. KimuraS. Uekusa OriginalPaper 15 February 2011 Pages: 233 - 238
Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation S. P. WongQicai PengS. S. Lau OriginalPaper 15 February 2011 Pages: 239 - 244
Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition S. HanK. H. YoonS. K. Koh OriginalPaper 15 February 2011 Pages: 245 - 250
X-Ray Photoelectron Spectroscopy Investigation of the Interaction of NF3 with Silicon T. W. LittleF. S. Ohuchi OriginalPaper 15 February 2011 Pages: 251 - 256
Thermal Stability of Cu Films on Tin/Ti/Si(100) by Partially Ionized Beam Deposition H. G. JangK. H. KimS. K. Koh OriginalPaper 15 February 2011 Pages: 257 - 262
Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure Jer-Shen MaaChien-Hsiung Peng OriginalPaper 15 February 2011 Pages: 263 - 268
Investigations of Plasma Immersion Ion Implantation Hydrogenation for Poly-Si TFTS Using an Inductively Coupled Plasma Source Yuanzhong ZhouShu QinChung Chan OriginalPaper 15 February 2011 Pages: 269 - 274
In Situ Ion Beam Research in Argonne’s Intermediate Voltage Electron Microscope Charles W. AllenEdward A. Ryan OriginalPaper 15 February 2011 Pages: 277 - 287
On the Determination of Loop Nature in the Tem M. L. JenkinsH. FukushimaM. A. Kirk OriginalPaper 15 February 2011 Pages: 289 - 300
Cascade Defects Beyond the Primary Damage State H. L. Heinisch OriginalPaper 15 February 2011 Pages: 301 - 306
The Effect of Temperature on Defect Production by Displacement Cascades in α-Iron F. GaoD. J. BaconT. A. Lewis OriginalPaper 15 February 2011 Pages: 307 - 312
Transmission Electron Microscopy Study In-Situ of Radiation-Induced Defects in Copper at Elevated Temperatures T. L. DaultonM. A. KirkL. E. Rehn OriginalPaper 15 February 2011 Pages: 313 - 318
Defect Cluster Structure and Tensile Properties of Copper Single Crystals Irradiated With 600 MeV Protons Yong DaiMax Victoria OriginalPaper 15 February 2011 Pages: 319 - 324
Effects of the Surface on Displacement Cascades Produced by Heavy-Ion Irradiation of Ni3Al and Cu3Au S. MüllerM. L. JenkinsH. Wollenberger OriginalPaper 15 February 2011 Pages: 325 - 330
