Abstract
Ion beam synthesis of SiC/Si heterostructures was performed by MIEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were characterized by various techniques. Carbon redistribution in overstoichiometrically implanted samples during annealing to form a stoichiometric SiC layer has been observed for the first time. The FTIR spectra were found to be composed of two components, one attributed to amorphous SiC and the other to ß-SiC. It was also found that there are critical dose and critical energy at which the crystalline fraction increases abruptly. Other results on electrical and optical characterization are also presented and discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
K.J. Reeson, J. Stoemenos and P.L.F. Hemment, Thin Solid Films 191, 147 (1990).
P. Martin, B. Daudin, M. Dupuy, A. Ermolieff, M. Olivier, A.M. Papon, and G. Rolland, J. Appl. Phys. 67, 2908 (1990).
A. Chayahara, M. Kiuchi, A. Kinomura and Y. Mokuno, Jpn. J. Appl. Phys. 32, L1286 (1993).
A. Nejim, P.L.F. Hemment, J. Stoemenos, Appl. Phys. Lett. 66, 2646 (1995).
J.K.N. Lindner, A. Frohnwieser, B. Rauschenbach, and B. Strizker, Mat. Res. Soc. Symp. Proc. Vol. 354, 171 (1995).
J.K.N. Lindner, B. Gotz, A. Frohnwieser, and B. Stritzker, Mat. Res. Soc. Symp. Proc. Vol. 396, 877 (1996).
H. Yan, R.W.M. Kwok, S.P. Wong, Appl. Surf. Sci. 92, 61 (1996).
H. Yan, R.W.M. Kwok, S.P. Wong, Diamond and Related Materials 5, 556 (1996).
I.G. Brown, J.E. Gavin, R.A. MacGill, Appl. Phys. Lett. 47, 358 (1985).
Dihu Chen, S.P. Wong, W.Y. Cheung, R.W.M. Kwok, Yongping Guo, to be published.
W.G. Spitzer, D.A. Klelnman, C.J. Frosch, Phys. Rev. 113, 133 (1957).
J.A. Borders, S.T. Picraux, W. Beezhold, Appl. Phys. Lett. 18, 509 (1971).
H. Yan, S.P. Wong, L.C. Ho, R.W.M. Kwok, to be published.
W. Skorupa, R. Kogler, M. Voelskow, K. Schmalz, G. Morgenstern, P. Gaworzewski, Nucl. Instr. and Meth. B68, 408 (1992).
S. Lombardo, A. Cacciato, K. Kyllesbech Larsen, V. Raineri, F. La Via, V. Privitera, S.U. Campisano, J. Appl. Phys. 79, 3464 (1996).
L.C. Ho, M.Phil. Thesis, The Chinese University of Hong Kong (1996).
M.W.M. van Cleef, M.W.H. Philippens, F.A. Rubinelli, M.A. Kolter, R.E.I. Schropp, Mat. Res. Soc. Symp. Proc. (1996)
L.C. Ho and S.P. Wong, to be published.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wong, S.P., Ho, L.C., Cihen, D. et al. Ion Beam Synthesis of SiC/Si Heterostructures by MEVVA Implantation. MRS Online Proceedings Library 439, 167–172 (1996). https://doi.org/10.1557/PROC-439-167
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-439-167