Skip to main content
SpringerLink
Log in

Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

Highly carbon doped GaAs layers grown by metal organic vapor phase epitaxy (MOVPE) Has been investigated by transmission electron microscopy (TEM). Electron irradiation has been applied to generate point defects interacting with native defects, e.g., substitutional carbon. This irradiation induces periodically arranged striations perpendicular to the growth direction, which were observedin situ by TEM. Furthermore, precipitates (Ø= 10-15nm) were formed containing non-crystalline material, which most likely is gallium. To explain these phenomena a precipitation mechanism is proposed. It involvs small fluctuations of the incorporated C as well as the interaction of irradiation induced point defects, mainly As and C interstitials and As vacancies.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. M. Konagai, T. Yamada, T. Akatsuka, K. Saito, E. Tukumitsu and K. Takahashi, J. Cryst. Growth 98, 67 (1989).

    Article  Google Scholar 

  2. J.D. MacKenzie, C.R. Abernathy, S.J. Pearton and S.N.G. Chu, Appl.Phys.Lett. 66, 1397 (1995).

    Article  CAS  Google Scholar 

  3. G. Neumann, Th. Lauterbach, M. Maier, and K.H. Bachmann, Inst.Phys.Conf.Ser. No. 112, 167 (1990).

    CAS  Google Scholar 

  4. H. Hardtdegen, Chr. Ungermann, K. Wirtz, D. Guggi, J. Herion, H. Siekmann, and H. Lüth, J. Cryst.Growth 145, 440 (1994).

    Article  CAS  Google Scholar 

  5. R. Driad, et al., Inst. Phys. Conf. Ser. No. 141, 265 (1995).

    CAS  Google Scholar 

  6. R. Jones and S. Öberg, Semicond. Sci. 7, 855 (1992).

    Article  CAS  Google Scholar 

  7. H. Sohn, E.R. Weber, S. Nozaki, M. Konagai, and K. Takahashi, Mat.Res.Soc.Symp.Proc. 262, 129 (1992).

    Article  CAS  Google Scholar 

  8. A.J. Moll, E.E. Haller, J.W. Ager, and W. Walukiewicz, Appl.Phys.Lett. 65, 1145 (1994).

    Article  CAS  Google Scholar 

  9. R.C. Newman, in: Semiconductors and Semimetals, Ed. E.R. Weber, Vol.38, p. 117, Academic Press 1993

    Article  CAS  Google Scholar 

  10. H. Kohda, K. Wada, J. Crystal Growth 114, (1996)

  11. G.A. Gledhill, S.B. Upadhyay, M.J.L. Sangster, and R.C. Newman, J. Molecular Spectr. 247, 313 (1991).

    CAS  Google Scholar 

  12. H. Föll, U. Gösele, and O.B. Kohlbesen, J.Cryst.Growth 40, 90 (1977).

    Article  Google Scholar 

  13. B.P.R. Marioton, and U. Gösele, J.Appl.Phys. 63, 4661 (1988).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. MPI für Mikrostrukturphysik, Weinberg 2, D-06 120, Halle / Saale, Germany

    P. Werner & U. Gösele

  2. NTT, LSI Laboratories Atsugi-shi, 243-01, Japan

    H. Kohda

Authors
  1. P. Werner
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. U. Gösele
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Kohda
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Werner, P., Gösele, U. & Kohda, H. Electron Beam Enhanced Precipitation in Highly Carbon Doped GaAs Layers. MRS Online Proceedings Library 439, 203–208 (1996). https://doi.org/10.1557/PROC-439-203

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-439-203

Search

Navigation