Abstract
Secondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.
Similar content being viewed by others
References
J. O. Borland and R. Koelsch, Solid State Technology 36, 28 (1993).
K. Tsukamoto, S. Komori, T. Kuroi and Y. Akasaka Nucl. Instr. and Meth. B 59/60, 584–591 (1991).
R. A. Brown, O. Kononchuk, Z. Radzimski, G. A. Rozgonyi and F. Gonzalez, Nucl. Instr. and Meth., in press (1996).
O. Kononchuk, R. A. Brown, Z. Radzimski, G. A. Rozgonyi and F. Gonzalez, Appl. Phys. Lett., in press (1996).
R. A. Brown, O. Kononchuk, I. Bondarenko, Z. Radzimski, G. A. Rozgonyi and F. Gonzalez, submitted to The Journal of the Electrochemical Society (1996).
J. P. Biersack and L. G. Haggmark, Nucl. Instr. Meth. 174, 257–269 (1980).
M. Tamura, Mat. Sci. Rep. 6(4/5), (1991).
E. Lorenz, J. Gyulai, L. Frey, H. Ryssel and N. Q. Khanh, J. Mater. Res. 6, 1695–1700 (1991).
V. N. Erofeev and V. I. Nikitenko, Soy. Phys. - Solid State 13, 116 (1971).
K. Kyllesbech Larsen, V. Pritivera, S. Coffa, F. Priolo, S. U. Campisano, and A. Camera, Physical Review Letters 76, 1493–1496 (1996).
J. Y. Cheng, D. J. Eaglesham, D. C. Jacobson, P. A. Stolk, J. L. Benton and J. M. Poate, J. Appl. Phys. 80, 2105–2112 (1996).
M. Tamura, in Defect Control in Semiconductors, Sumino K., Editor, Elsevier Science Publishers, B.V., (1990).
A. Agarwal, K. Christensen, D.M. Maher, G.A. Rozgonyi and F. Gonzalez, Appl. Phys. Lett., in press (1996).
R. A. Brown, O. Kononchuk, R. D. Goldberg, G. A. Rozgonyi and F. Gonzalez, to be published.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Brown, R.A., Kononchuk, O., Radzimski, Z. et al. Secondary Defect Formation and Gettering in Mev Self-Implanted Silicon. MRS Online Proceedings Library 439, 155–160 (1996). https://doi.org/10.1557/PROC-439-155
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-439-155