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Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure

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Abstract

The stability of cobalt silicide formed on narrow polysilicon line degraded rapidly with shrinkage of linewidth as shown by the increase of sheet resistance after annealing. Stability was improved by adding a titanium interlayer under cobalt with or without a Ti or TiN cap layer. The stability was affected by silicide thickness and substrate doping. In best cases an increase of sheet resistance after annealing was still observed. Adding an Ar ion bombardment step improved the thermal stability drastically. This structure did not show any sheet resistance change after a 30 min annealing at 850°C, either with or without interlayer or cap layer.

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  1. Sharp Microelectronics Technology, 5700 NW Pacific Rim Blvd., Camas, WA, 98607, USA

    Jer-Shen Maa & Chien-Hsiung Peng

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  1. Jer-Shen Maa
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  2. Chien-Hsiung Peng
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Correspondence to Jer-Shen Maa.

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Maa, JS., Peng, CH. Effect of Argon Ion Bombardment on the Stability of Narrow Cobalt Silicide/Polysilicon Structure. MRS Online Proceedings Library 439, 263–268 (1996). https://doi.org/10.1557/PROC-439-263

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  • DOI: https://doi.org/10.1557/PROC-439-263

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