Skip to main content
SpringerLink
Log in

Defect Diffusion During Annealing of Low-Energy Ion-Implanted Silicon

  • Published:
MRS Online Proceedings Library Aims and scope

Abstract

We present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7×7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underdy the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.D. Plummer, P.G. Griffin, Nucl. Instrum. Meth. B 102, 160 (95).

  2. U. Gösele and T.Y. Tan Diffusion in Solids, Unsolved Problems (Trans Tech. Publications, Zurich, 1992), p. 189.

    Google Scholar 

  3. H.-J. Gossmann, P.A. Stolk, D.J. Eaglesham, G.H. Gilmer, and J.M. Poate, Process Physics and Modeling in Semiconductor Technology, editied by G.R. Srinivasan, C. S. Murthy, and S.T. Dunham (Electrochemical Society, Pennington, New Jersery, 1996).

  4. U. Gosele, A. Plöβl, and T.Y. Tan Process Physics and Modeling in Semiconductor Technology, edited by G.R. Srinivasan, C.S. Murthy and S.T. Dunham (Electrochemical Society, Pennington, New Jersey, 1996), p. 309.

  5. G.H. Gilmer, T. Diaz de la Rubia, D. Stock and M. Jaraiz, Nucl. Instrum. and Methods B 102, 247 (1995).

    Article  CAS  Google Scholar 

  6. F.H. Stillinger and T.A. Weber, Phys. Rev. B 31, 5262 (1985).

    Article  CAS  Google Scholar 

  7. J.P. Biersack and J.F. Ziegler, Nucl. Instrum. and Methods. 194, 93 (1982).

    Article  CAS  Google Scholar 

  8. M. J. Caturla, L. Marques, T. Diaz de la Rubia and G.H. Gilmer, Phys. Rev. B (in press).

  9. J. Narayan, O.S. Oen, D. Fathy and O.W. Hollan, Materials Letters 3, 67 (1985).

    Article  CAS  Google Scholar 

  10. P.C. Zalm, J.Appl. Phys. 54, 2660 (1983).

    Article  CAS  Google Scholar 

  11. M. Jaraiz, G.H. Gilmer, J. M. Poate and T. Diaz de la Rubia, Appl. Phys. Lett. 68, 409 (1996).

    Article  CAS  Google Scholar 

  12. L. Pelaz and G.H. Gilmer (private communication).

  13. J. Zhu, T. Diaz de la Rubia, L. Yang, C. Mailhiot and G.H. Gilmer, Phys. Rev. B54, 4741 (1996).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lawrence Livermore National Laboratory, Livermore, CA, 94551, USA

    P. J. Bedrossian, M.-J. Caturla & T. De La Diaz Rubia

Authors
  1. P. J. Bedrossian
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M.-J. Caturla
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. De La Diaz Rubia
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to P. J. Bedrossian.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Bedrossian, P.J., Caturla, MJ. & De La Diaz Rubia, T. Defect Diffusion During Annealing of Low-Energy Ion-Implanted Silicon. MRS Online Proceedings Library 439, 53–58 (1996). https://doi.org/10.1557/PROC-439-53

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1557/PROC-439-53

Search

Navigation