Ion Beam Modification of Cluster-Covered Silicon Surfaces

Abstract

Clusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.