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Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si

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Abstract

The 2D-dopant and defect distributions resulting from 80 keV ion implantation of As+ ions into Si through a high-edge mask are presented. The distributions are obtained by means of an efficient computer procedure using the results of Monte Carlo simulation. Two versions of the computer code TRIM are used. The 2D-target atom redistribution is obtained as a result of cascade collisions. The simulation reveals the effect of near-mask-edge target atom depletion. This effect is related to the recoil phenomena and can be explained on the basis of simple model.

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Authors and Affiliations

  1. Institute of Electronics, Bulgarian Academy of Sciences, 72 blvd. Tzarigradsko Chaussee, BG-1784, Sofia, Bulgaria

    D. Danailov & D. Karpuzov

  2. EPF Lausanne, Centre de Recherches en Physique des Plasmas, Association EURATOM, Technologie de la Fusion, CH-5232, Villigen PSI, Switzerland

    A. Almazouzi, P. de Almeida & M. Victoria

Authors
  1. D. Danailov
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  2. D. Karpuzov
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  3. A. Almazouzi
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  4. P. de Almeida
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  5. M. Victoria
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Danailov, D., Karpuzov, D., Almazouzi, A. et al. Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si. MRS Online Proceedings Library 439, 119–124 (1996). https://doi.org/10.1557/PROC-439-119

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  • DOI: https://doi.org/10.1557/PROC-439-119

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