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Dose Rate Effects During Damage Accumulation in Silicon

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Abstract

We combine molecular dynamics and Monte Carlo simulations to study damage accumulation and dose rate effects during irradiation of Silicon. We obtain the initial stage of the damage produced by heavy and light ions using classical molecular dynamics simulations. While heavy ions like As or Pt induce amorphization by single ion impact, light ions like B only produce point defects or small clusters of defects. The amorphous pockets generated by heavy ions are stable below room temperature and recrystallize at temperatures below the threshold for recrystallization of a planar amorphous-crystalline interface. The damage accumulation during light ion irradiation is simulated using a Monte Carlo model for defect diffusion. In this approach, we study the damage in the lattice as a function of dose and dose rate. A strong reduction in the total number of defects left in the lattice is observed for lower dose rates.

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Authors and Affiliations

  1. Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA, 94550, USA

    M. J. Caturla & T. Diaz de la Rubia

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  1. M. J. Caturla
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  2. T. Diaz de la Rubia
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Caturla, M.J., de la Rubia, T.D. Dose Rate Effects During Damage Accumulation in Silicon. MRS Online Proceedings Library 439, 125–129 (1996). https://doi.org/10.1557/PROC-439-125

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  • DOI: https://doi.org/10.1557/PROC-439-125

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