Abstract
Transmission electron microscopy of He-implanted Si-Ge and InGaAs shows an attractive interaction between cavities and dislocations. Calculation indicates that cavities are attracted to dislocations through surrounding strain fields, and strong binding (100s of eV) occurs when a cavity intersects the core. In a strained SiGe/Si heterostructure, He implantation enhances relaxation rates, and cavities bound to misfit dislocations show evidence of increasing relaxation at equilibrium by lowering dislocation energies. The interaction is expected for all crystalline solids, and gives insight into voids in GaN/sapphire and bubbles in He-implanted metals.
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Follstaedt, D.M., Myers, S.M., Lee, S.R. et al. Interaction of Cavities and Dislocations in Semiconductors. MRS Online Proceedings Library 439, 209–214 (1996). https://doi.org/10.1557/PROC-439-209
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DOI: https://doi.org/10.1557/PROC-439-209