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Modeling of Extended Defects in Silicon

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Abstract

Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.

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Authors and Affiliations

  1. Department of ECE, University of Florida, Gainesville, FL, 32611, USA

    M. E. Law, S. K. Earles & A. D. Lilak

  2. Department of MSE, University of Florida, Gainesville, FL, 32611, USA

    K. S. Jones

  3. Semiconductor Group, Texas Instruments, Inc., Dallas, TX, 75243, USA

    J. W. Xu

Authors
  1. M. E. Law
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  2. K. S. Jones
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  3. S. K. Earles
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  4. A. D. Lilak
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  5. J. W. Xu
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Corresponding author

Correspondence to M. E. Law.

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Law, M.E., Jones, K.S., Earles, S.K. et al. Modeling of Extended Defects in Silicon. MRS Online Proceedings Library 439, 3–10 (1996). https://doi.org/10.1557/PROC-439-3

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  • DOI: https://doi.org/10.1557/PROC-439-3

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