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Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon

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Abstract

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The Pdoped silicon was implanted with boron ions of 40 keV energy to a dose of 3 × 1014 cm−2, and then annealed at temperatures ranging from 700-1000°C in a N2 ambient for varying durations. As P doping concentration increased from 3 × 1019 to 1 × 1020 cm−3, boron diffusivity and the immobile boron fraction decreased. Our experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

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Authors and Affiliations

  1. Department of Physics, University of Western Ontario, London, Ontario, N6A 3K7, Canada

    M. B. Huang, U. Myler, T. W. Simpson, P. J. Simpson & I. V. Mitchell

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  1. M. B. Huang
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  2. U. Myler
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  3. T. W. Simpson
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  4. P. J. Simpson
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  5. I. V. Mitchell
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Huang, M.B., Myler, U., Simpson, T.W. et al. Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon. MRS Online Proceedings Library 439, 41–46 (1996). https://doi.org/10.1557/PROC-439-41

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  • DOI: https://doi.org/10.1557/PROC-439-41

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