Abstract
Copper films on Si(100) were prepared by partially ionized beam at 0 kV and 3 kV acceleration voltages in order to investigate effects of ion energy on electrical property with thickness. X-ray diffraction(XRD) pattern analysis was used to investigate crystallinity of the copper films, microstructure by Scanning electron microscope(SEM) and surface roughness by atomic force microscopy(AFM). The crystallinity of the copper films grown at the 3 kV was more (111) textured than that at the 0 kV. The copper films grown at the both conditions had nearly same grain size below a thickness of 1000 Å. The 1800 Å Cu film grown at the 3 kV was 3 times rough than that at the 0 kV. The resistivity of copper films increased due to surface and grain boundary scattering, and the change of resistivity was discussed in terms of surface roughness, grain size and film density assisted by average depositing energy.
Similar content being viewed by others
References
R. P. Vinch, E. M. Zielinski, and J. C. Bravman, Thin Solid Films 262, p. 142 (1995).
J. Y. Kim, H. A. Marzouk, P. J. Reucroft, C. C. Eloi, and J. D. Robertson, J. Appl. Phys. 78, p. 245(1995).
Y. Igarashi, T. Yamanobe, and T. Ito, J. Electrochem. Soc. 142, p. L36 (1995).
T. Takagi, J. Vac. Sci. Technol. A 2, p. 382 (1984).
I. Yamada, T. Takagi, IEEE Trans. Electron Devices ED-34, p. 1018 (1987).
S. K. Koh, K. H. Kim, W. K. Choi, H. G. Jang, Y. S. Yoon, S. Han, and H. J. Jung, Materials Modification and Synthesis bzyon Beam Processing, edited by D. E. Alexander, W. Skorupa, N. W. Cheung, B. Park (Mater. Res. Soc. Proc. 396, Pittsburgh, PA 1996), p. 581–586.
M. E. Harper, J. J. Cuomo, and H. R. Kaufmann, J. Vac. Sci. Technol. 21, p. 737 (1982)
R. A. Roy, J. J. Cuomo, and D. S. Yee, J. Vac. Sci. Technol. A 6, p. 1621 (1988).
E. Kay and S.M. Rossnagel, Handbook of ion beam processing technology edited by J.J. Cuomo, S.M. Rossnagel, and H.R. Kaufmann, New Jersey, p. 170–193.
W. L. Brown, M. F. Jarrold, R. L. McEachern, M. Sosnowski, G. Takaoka, H. Usui, and I. Yamada, Nucl. Instrum. Methods Phys. Res. B 59/60, p. 182 (1991).
C. V. Thompson, and Roland Carel, Mater. Sci. Eng. B 32, p. 211(1995).
S. P. Murarka, Metallization-theory and practice for VLSI and ULSI, Butterworth-Heinemann, stoneham, 1993, p. 41–46.
C.R. Teller and A. J. Tosser, Size Effect in Thin Film, Elsevier, New York, 1982.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Han, S., Yoon, K.H., Kim, K.H. et al. Electrical Resistivity of Copper Films by Partially Ionized Beam Deposition. MRS Online Proceedings Library 439, 245–250 (1996). https://doi.org/10.1557/PROC-439-245
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-439-245