High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation T. NakayamaH. MiyamotoN. Samoto OriginalPaper Pages: 555 - 558
Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN M. ShurB. GelmontM. Asif Khan OriginalPaper Pages: 777 - 785
Reliability of AllnAs/lnGaAs/lnP HEMT with WSi ohmic contacts H. SasakiDG K. YajimaK. Ando OriginalPaper Pages: 559 - 563
Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED Hui YangOliver BrandtKlaus Ploog OriginalPaper Pages: 787 - 791
Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion Kazuhiko ItayaMark J. MondryJames L. Merz OriginalPaper Pages: 565 - 569
MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates M. A. L. JohnsonShizuo FujitaJ. A. Edmond OriginalPaper Pages: 793 - 797
Chemical beam etching of InP in GSMBE J. L. GentnerP. H. JarryL. Goldstein OriginalPaper Pages: 571 - 575
Residual impurities in GaN/Al2O3 grown by metalorganic vapor phase epitaxy Akihiko IshibashiHidemi TakeishiYuzaburoh Ban OriginalPaper Pages: 799 - 803
Morphological and electrical characterization of AI/Ni/n-lnP contacts with tapered insertion Ni-Layer S. MiyazakiT. C. LinT. Okumura OriginalPaper Pages: 577 - 580
A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate T. UchidaH. KurakakeS. Yamazaki OriginalPaper Pages: 581 - 584
Estimated phase equilibria in the transition metal-Ga-N systems: Consequences for electrical contacts to GaN S. E. MohneyX. Lin OriginalPaper Pages: 811 - 818
Controlled beam dry etching of InP by using Br2-N2 Gas Satoshi OkuYasuo ShibataKenichi Ochiai OriginalPaper Pages: 585 - 591
Ohmic contacts to n-type GaN using Pd/Al metallization A. T. PingM. Asif KhanI. Adesida OriginalPaper Pages: 819 - 824
(NH4)2Sx-treated InP(100) surfaces studied by soft x-ray photoelectron spectroscopy S. MaeyamaM. SugiyamaM. Oshima OriginalPaper Pages: 593 - 596
Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2 A. T. PingA. C. SchmitzI. Adesida OriginalPaper Pages: 825 - 829
Formation of PNx/lnP structure byIn Situ remote plasma processes Yoshifumi SakamotoTakashi SuginoJunji Shirafuji OriginalPaper Pages: 597 - 601
Schottky barriers on n-GaN grown on SiC E. V. KalininaN. I. KuznetsovC. H. Carter OriginalPaper Pages: 831 - 834
Cadmium sulfide surface stabilization for InP-based optoelectronic devices K. VaccaroA. DavisJ. P. Lorenzo OriginalPaper Pages: 603 - 609
Reactive ion etching of gallium nitride films Heon LeeDavid B. ObermanJames S. Harris OriginalPaper Pages: 835 - 837
Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP Hiroyasu NakataKazuo SatohYoshikazu Takeda OriginalPaper Pages: 611 - 617
Ion implantation and rapid thermal processing of Ill-V nitrides J. C. ZolperM. Hagerott CrawfordR. A. Stall OriginalPaper Pages: 839 - 844
Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets H. FujikuraH. Hasegawa OriginalPaper Pages: 619 - 625
The incorporation of hydrogen into III-V nitrides during processing S. J. PeartonR. J. ShulJ. D. Mackenzie OriginalPaper Pages: 845 - 849
Material and electrical characteristics of iron doped Pt-lnAIAs schottky diodes grown by LP-MOCVD Kyushik HongDimitris PavlidisFrédéric Séjalon OriginalPaper Pages: 627 - 632
Magnetic resonance studies of GaN based light emitting diodes W. E. CaelosE. R. GlaserS. Nakamura OriginalPaper Pages: 851 - 854
Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization N. TakahashiM. ShiotaJ. Shirafujf OriginalPaper Pages: 633 - 636
MBE growth and properties of ZnO on sapphire and SiC substrates M. A. L. JohnsonShizuo FujitaJ. F. Schetzina OriginalPaper Pages: 855 - 862
Low temperature grown be-doped InAIP band offset reduction layer to p-type ZnSe K. IwataH. AsahiT. Matsuoka OriginalPaper Pages: 637 - 641
Electronic properties of boron in p-type bulk 6H-SiC W. C. MitchelMatthew RothS. R. Smith OriginalPaper Pages: 863 - 867
New low contact resistance triple capping layer enabling very high Gm InAIAs/lnGaAs HEMTs K. HiguchiM. MoriT. Mishima OriginalPaper Pages: 643 - 647
Effect of annealing temperature on 1.5 μm photoluminescence from Er-lmplanted 6H-SiC A. J. StecklJ. DevkajanS. W. Novak OriginalPaper Pages: 869 - 873
A novel insulated gate technology for ingaas high electron mobility transistors using silicon interlayer based passivation technique S. SuzukiS. KodamaH. Hasegawa OriginalPaper Pages: 649 - 656
Reactive ion etching of trenches in 6H-SiC M. KothandaramanD. AlokB. J. Baliga OriginalPaper Pages: 875 - 878
Fabrication of 60 nm pitch ordered InP pillars by EB-lithography and anodization Toshiyuki TakizawaMasafumi NakaharaShigehisa Arai OriginalPaper Pages: 657 - 660
Aluminum and boron ion implantations into 6H-SiC epilayers Tsunenobu KimotoAkira ItohMasanori Watanabe OriginalPaper Pages: 879 - 884
Photocurrent anisotropy in compositional modulated superlattice of long-range ordered Ga0.5In0.5P Takashi KitaAkira FujiwaraTaneo Nishino OriginalPaper Pages: 661 - 665
Elevated temperature nitrogen implants in 6H-SiC Jason GaednerMulpuri V. RaoM. Ghezzo OriginalPaper Pages: 885 - 892
Identification of topmost atom on InP (001) surface by coaxial impact collision ion scattering spectroscopy T. NishiharaM. ShinoharaH. Koinuma OriginalPaper Pages: 667 - 670
High field activation of micropipes in high resistivity silicon carbide T. S. SudarshanG. GradinaruR. H. Hopkins OriginalPaper Pages: 893 - 898
Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering M. TabuchiN. YamadaH. Kamei OriginalPaper Pages: 671 - 675
Experimental characterization of electron-hole generation in silicon carbide Y. WangJ. A. CooperL. A. Lipkin OriginalPaper Pages: 899 - 907
Photoconductivity and photoluminescence studies in copper diffused InP D. PalD. N. Bose OriginalPaper Pages: 677 - 684
Improved oxidation procedures for reduced SiO2/SiC defects L. A. LipkinJ. W. Palmour OriginalPaper Pages: 909 - 915
Donor passivation in n-AllnAs layers by fluorine Y. YamamotoN. HayafujiS. Takamiya OriginalPaper Pages: 685 - 690
Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition Z. C. FengA. RohatgiK. P. Se OriginalPaper Pages: 917 - 923
Chemical-bonding structure of InP surface in MOVPE studied by surface photo-absorption Yasuyuki KobayashiNaoki Kobayashi OriginalPaper Pages: 691 - 694
Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs Touko SugiuraNobuyasu HaseNobuhiko Sawaki OriginalPaper Pages: 695 - 699