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Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering

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Abstract

We conducted x-ray crystal truncation rod (CTR) measurements using synchro-tron radiation to analyze the As atom distribution in InP to the order of 1 ML. The InP samples which were only exposed to AsH3(+PH3) and capped by InP were investigated to study the effect of the purge sequence. The purge sequence is unavoidable to grow heteroepitaxial layers by OMVPE and is considered to affect largely the structure of the interface. From the results of the measurement and the computer simulation, the distribution of P and As atoms of the order of 1 ML was discussed as functions of the exposing time. It was shown that the number of As atoms contained in the samples saturated when the AsH3-exposure time is longer than 10 s. Comparing the profiles of AsH3-exposed samples with that of (AsH3 + PH3)-exposed samples, it was found that the As distribution in the buffer layer was suppressed in (AsH3 + PH3)-exposed samples. In order to obtain the sharp interfaces, the AsH3-exposure time must be shorter than 0.5 s.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, School of Engineering, Nagoya University, 464-01, Nagoya, Japan

    M. Tabuchi, N. Yamada, K. Fujibayashi & Y. Takeda

  2. Opto-electronics R&D Laboratories, Sumitomo Electric Industries, Ltd., 1, Taya-cho, Sakae-ku, 244, Yokohama, Japan

    H. Kamei

Authors
  1. M. Tabuchi
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  2. N. Yamada
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  3. K. Fujibayashi
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  4. Y. Takeda
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  5. H. Kamei
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Tabuchi, M., Yamada, N., Fujibayashi, K. et al. Group-V atoms exchange due to exposure of InP surface to AsH3(+PH3) revealed by x-ray CTR scattering. J. Electron. Mater. 25, 671–675 (1996). https://doi.org/10.1007/BF02666522

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  • DOI: https://doi.org/10.1007/BF02666522

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