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Aluminum and boron ion implantations into 6H-SiC epilayers

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Abstract

Aluminum and boron ion implantations into n-type 6H-SiC epilayers have been systematically investigated. Redistribution of implanted atoms during high-temperature annealing at 1500°C is negligibly small. The critical implant dose for amorphization is estimated to be 1 × 1015 cm−2 for Al+ implantation and 5 × 1015 cm-2 for B+ implantation. By Al+ implantation followed with 1500°C-annealing, p-type layers with a sheet resistance of 22 kΩ/— can be obtained. B+ implantation results in the formation of highly resistive layers, which may be attributed to the deep B acceptor level.

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References

  1. Silicon Carbide and Related Materials, eds. M.G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M.M. Rahman (Bristol: Institute of Physics, 1994).

    Google Scholar 

  2. G. Pensl, R. Helbig, H. Zhang, G. Ziegler and P. Lanig,Mater. Res. Soc. Symp. Proc. 97, 195 (1987).

    CAS  Google Scholar 

  3. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla and H. Bakhru,IEEE Electron Dev. Lett. 12, 639 (1992).

    Article  Google Scholar 

  4. T. Kimoto, A. Itoh, H. Matsunami, T. Nakata and M. Watanabe,J. Electron. Mater. 24, 235 (1995).

    Article  CAS  Google Scholar 

  5. S. Yaguchi, T. Kimoto, N. Ohyama and H. Matsunami,Jpn. J. Appl. Phys. 34, 3036 (1995).

    Article  CAS  Google Scholar 

  6. E.V. Kalinina, N.K. Prokofeva, A.V. Suvorov, G.F. Kholuyanov and V.E. Chelnokov,Sou. Phys. Semicond. 9, 820 (1976).

    Google Scholar 

  7. M.V. Rao, P. Griffiths, O.W. Holland, G. Keiner, J.A. Freitas, Jr., D.S. Simons, P.H. Chi and M. Ghezzo,J. Appl. Phys. 77, 2479 (1995).

    Article  CAS  Google Scholar 

  8. O.J. Marsh,Silicon Carbide 1973, eds. R.C. Marshall, J.W. Faust, Jr. and C.E. Ryan, (Columbia: Univ. of South Carolina Press, 1974), p.471.

    Google Scholar 

  9. J.A. Edmond, S.P. Withrow, W. Wadlin and R.F. Davis,Mater. Res. Soc. Symp. Proc. 77, 193 (1987).

    CAS  Google Scholar 

  10. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer and J.J. Kopanski,Appl. Phys. Lett. 63, 1206 (1993).

    Article  CAS  Google Scholar 

  11. A. Addamiano, G.W. Anderson, J. Comas, H.L. Hughes and W. Lucke,J. Electrochem. Soc. 119, 1355 (1972).

    Article  CAS  Google Scholar 

  12. H. Ryssel and I. Ruge,Ion Implantation (Chichester: John Wiley & Sons, 1986), Ch. 2.

    Google Scholar 

  13. M. Ikeda, H. Matsunami and T. Tanaka.Phys. Reu. B22, 2842 (1980).

    Google Scholar 

  14. Yu.A. Vodakov, N. Zhumaev, B.P. Zverev, G.A. Lomakina, E.N. Mokhov, V.G. Oding, V.V. Semenov and Yu.F. Simakhin,Sov. Phys. Semicond. 11, 214 (1977).

    Google Scholar 

  15. W. Suttrop, G. Pensl and P. Lanig,Appl. Phys. A51, 231 (1990).

    CAS  Google Scholar 

  16. A.O. Konstantinov,Sov. Phys. Semicond. 26, 151 (1992).

    Google Scholar 

  17. W.J. Choyke and G. Pensl, private communication.

  18. A. Itoh, T. Kimoto and H. Matsunami,Proc. 7th Intl. Symp. Power Semicond. Devices & IC’s (Yokohama, 1995), p.101.

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Authors and Affiliations

  1. Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, 606-01, Kyoto, Japan

    Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami, Toshitake Nakata & Masanori Watanabe

  2. Ion Engineering Research Institute, Corporation, Tsuda, Hirakata, 573-01, Osaka, Japan

    Toshitake Nakata & Masanori Watanabe

Authors
  1. Tsunenobu Kimoto
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  2. Akira Itoh
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  3. Hiroyuki Matsunami
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  4. Toshitake Nakata
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  5. Masanori Watanabe
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Kimoto, T., Itoh, A., Matsunami, H. et al. Aluminum and boron ion implantations into 6H-SiC epilayers. J. Electron. Mater. 25, 879–884 (1996). https://doi.org/10.1007/BF02666653

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  • DOI: https://doi.org/10.1007/BF02666653

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