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Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP

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Abstract

The effects of interfacial layers with high impurity concentration on the properties of homoepitaxial InP layers have been studied by far-infrared (FIR) magnetoabsorption, in addition to dc mobility, Hall effect, and photoluminescence (PL) measurements. The layers are grown by organometallic vapor phase epitaxy with trimethylindium and tertiarybutylphosphine. Impurity absorption as well as cyclotron resonance is observed in the FIR measurements. Variations in the intensity of the resonance signals and the mobilities obtained from the linewidths of the cyclotron resonance are interpreted by a double layer model, i.e. a bulk layer with an interfacial layer. Carrier concentrations, dc mobilities, and PL intensities of both bound excitons and free excitons are also explained by the model.

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Authors and Affiliations

  1. Department of Physics, Graduate School of Science, Osaka University, 1-16 Machikaneyama-cho, 560, Toyonaka, Japan

    Hiroyasu Nakata, Kazuo Satoh & Tyuzi Ohyama

  2. Department of Materials Science and Engineering, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, 464-01, Nagoya, Japan

    Yasufumi Fujiwara, Youichi Nonogaki & Yoshikazu Takeda

Authors
  1. Hiroyasu Nakata
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  2. Kazuo Satoh
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  3. Tyuzi Ohyama
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  4. Yasufumi Fujiwara
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  5. Youichi Nonogaki
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  6. Yoshikazu Takeda
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Nakata, H., Satoh, K., Ohyama, T. et al. Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP. J. Electron. Mater. 25, 611–617 (1996). https://doi.org/10.1007/BF02666512

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  • DOI: https://doi.org/10.1007/BF02666512

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