Magnetic resonance studies of GaN based light emitting diodes
- 96 Downloads
We report the application of electrical detection of magnetic resonance (EDMR) and electroluminescence detection of magnetic resonance (ELDMR) to study the recombination processes in InGaN/AlGaN double heterostructure p-n junctions. These techniques are especially well suited to the problems of defects in device structures in that they are much more sensitive than conventional paramagnetic resonance and are responsive to only those defects involved in the electrooptical properties of the structure. One resonance is observed at g≈2.00 and is identified as a Zn-related acceptor trap in the InGaN layer. A second resonance with g≈1.99 is identified as a deep donor.
Key wordsElectroluminescence electron spin resonance GaN light emitting diodes (LEDs)
Unable to display preview. Download preview PDF.
- 8.M. Kunzer, U. Kaufmann, K. Maier, J. Schneider, N. Herres, I. Akasaki, and H. Amano,Mater. Sci. Forum 143–147, 87 (1994); K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akaski and H. Amano,Mater. Sci. Forum 143-147, 93 (1994).Google Scholar
- 11.D.J. Lépine,Phys. Rev. B 6, 436 (1972); I. Solomon,Solid State Commun. 20,215 (1976); F.C. Rong, G.J. Gerardi, W.R. Buchwald, E.H. Poindexter, M.T. Umlor, D.J. Keeble and W.L. Warren,Appl. Phys. Lett. 60, 610 (1992); B. Stich, S. Greulich-Weber and J.-M. Spaeth,J. Appl. Phys. 77, 1546 (1995).CrossRefGoogle Scholar