Abstract
The growth of GaN and AlGaN by molecular beam epitaxy (MBE) has been studied using GaN/SiC substrates. The GaN/SiC substrates consisted of ∼3 μm thick GaN buffer layers grown on 6H-SiC wafers by metalorganic vapor phase epitaxy (MOVPE) at Crée Research, Inc. The MBE-grown GaN films exhibit excellent structural and optical properties—comparable to the best GaN grown by MOVPE. AlxGa1−xN films (x ∼ 0.06-0.08) and AlxGa1−xN/GaN multi-quantum-well structures which display good optical properties were also grown by MBE on GaN/SiC substrates.
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M.A. Khan, J.N. Kuznia, A.R. Bhattarai and D.T. Olson,Appl. Phys. Lett. 62, 1786 (1993).
M.A. Khan, A.R. Bhattarai, J.N. Kuznia and D.T. Olson,Appl. Phys. Lett. 63, 1241 (1993).
M.A. Khan,1993 ONR/SDIO UVMaterials Review, Washington, DC (1993).
S. Nakamura, T. Mukai and M. Senoh,Appl. Phys. Lett. 64, 1687 (1994).
R. J. Molnar, R. Singh and T.D. Moustakas,Appl. Phys. Lett. 66, 268 (1995).
T.D. Moustakas and R.J. Molnar,Mater. Res. Soc. Symp. Proc. 281, 753 (1993).
C. Wang and R.F. Davis,Appl. Phys. Lett. 63, 990 (1993).
M.E. Lin, G. Zue, G.L. Zhou, J.E. Green and H. MorkoÇ,Appl. Phys. Lett. 63, 932 (1993).
J.M. Zavada, R.G. Wilson, C.R. Abernathy and S. J. Pearton,Appl. Phys. Lett. 64, 2724 (1994).
M.E. Lin, S. Strite, A. Agarwal, A. Salvador, G.L. Zhou, N. Teraguchi, A. Rockett and H. MorkoÇ,Appl. Phys. Lett. 62, 702 (1993).
M.E. Lin, B.N. Sverdlov and H. MorkoÇ,Appl. Phys. Lett. 63, 3625 (1993).
M.E. Lin, B. Sverdlov, G.L. Zhou and H. MorkoÇ,Appl. Phys. Lett. 62, 3479 (1993).
An exception to this point is the work of R.J. Molnar and T.D. Moustakas who modified a commercial MBE system for both optical emission spectroscopy and Langmuire probe studies of nitrogen plasmas generated by an ECR plasma source. See R.J. Molnar and T.D. Moustakas,J. Appl. Phys. 76, 4587 (1994).
W.C. Hughes, W.H. Rowland, Jr., M.A.L. Johnson, Shizuo Fujita, J. W. Cook, Jr., J.F. Schetzina, J. Ren and J.A. Edmond,Proc. 1995 Phys. and Chem. of Semiconductor Interfaces (PCSI) Conf, Phoenix, AZ, 1995. To be published inJ. Vac. Sci. Technol. (1995).
R. Dingle, D.D. Sell, S.E. Stokowski and M. Ilegems,Phys. Rev. B 4, 1211 (1971).
N.V. Edwards, T.W. Weeks, Jr., M.D. Bremser, R.F. Davis and D.E. Aspnes, to be published.
S. Krishnankutty, R.M. Kolbas, M.A. Khan, J.N. Kuznia, J.M. Van Hove and D.T. Olson,J. Electron. Mater. 21, 609 (1992).
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Johnson, M.A.L., Fujita, S., Rowland, W.H. et al. MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates. J. Electron. Mater. 25, 793–797 (1996). https://doi.org/10.1007/BF02666638
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DOI: https://doi.org/10.1007/BF02666638