Abstract
Using surface photo-absorption spectra, we established a phase diagram of the surface chemical-bonding structure for the P-stabilized surface in InP metalorganic vapor phase epitaxy as a function of substrate temperature and PH3 partial pressure. At 550°C and PH3 partial pressures of 10 and 30 Pa, the surface is (2 × 4)-like consisting of P dimers having a bond axis parallel to [110]. As the substrate temperature decreases and the PH3 partial pressure increases, amorphous P species start to adsorb excessively on (2×4)-like P dimer surface. A c(4 × 4)-like surface was not observed. From InP growth experiments for each P surface phase, we found that, to obtain high-quality InP epitaxial layers, excess P adsorption should be suppressed by minimizing the formation of native defects.
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Kobayashi, Y., Kobayashi, N. Chemical-bonding structure of InP surface in MOVPE studied by surface photo-absorption. J. Electron. Mater. 25, 691–694 (1996). https://doi.org/10.1007/BF02666525
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DOI: https://doi.org/10.1007/BF02666525