Abstract
The addition of a thin Ni layer has improved the surface morphology of Al/n-InP contacts which show an enhanced Schottky barrier height (SBH) after rapid thermal annealing. In order to determine the optimum thickness of the insertion Ni layer, we have fabricated a unique sample in which the thickness of the insertion Ni layer tapered off in space. The improvement of the surface morphol-ogy as well as the SBH enhancement were realized by inserting 35 nm Ni layer annealed at rather low temperatures (around 450°C). The solid-phase reaction between Ni and InP might play an important role in the low-temperature formation of A1P which was responsible for the SBH enhancement.
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Miyazaki, S., Lin, T.C., Nishida, C. et al. Morphological and electrical characterization of AI/Ni/n-lnP contacts with tapered insertion Ni-Layer. J. Electron. Mater. 25, 577–580 (1996). https://doi.org/10.1007/BF02666506
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DOI: https://doi.org/10.1007/BF02666506