Abstract
Micropipes in high resistivity (p≥5 kΩcm) SiC are highly activated in parallel electric fields (vertical devices) at room temperature starting at very low fields of 5-10 kV/cm, especially in the doped material. No activation of micropipes is observed in high fields (>100 kV/cm) perpendicular to their orientation (lateral devices). In the last case, the high field limitation is due to surface flashover phenomena taking place at 100-175 kV/cm in vacuum ambient and depending strongly on the material growth technology and the gap length. Non-ohmic behavior was not observed in lateral devices up to high applied fields. The high field characterization method is proposed as a powerful tool for the evaluation of the quality of SiC material for next-generation high voltage/high power devices.
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References
H.M. Hobgood, J.P. McHugh, J. Greggi, R.H. Hopkins and M. Skowronski,Proc. Fifth Conf. Silicon Carbide and Related Materials, (Washington, DC, 1993), p. 7.
R.F. Davis, ibid., p. 1.
J.A. Powell, P.G. Neudeck, D.J. Larkin, J.W. Yang and P. Pirouz, op. cit., p. 161.
C. Glass, C.I. Harris, V.F. Tsvetkov, P.F. Fewster, J.E. Sundgren and E. Janzen, op. cit., p. 165.
D. Black, L. Robins, N. Buchan, and D. Heushall, op. cit., p. 337.
P.G. Neudeck and JA. Powell,IEEE Trans. Electron Dev. Lett. 15, 63 (1994).
P.G. Neudeck, D.J. Larkin, C.S. Salupo, J.A. Powell and L.G. Matus, op. cit., p.475.
A.O. Konstantinov and P.A. Ivanov, op. cit., p. 37.
L.G. Matus, J.S. Powell and C.S. Salupo,Appl. Phys. Lett. 59, 1770 (1991).
G. Gradinaru and T.S. Sudarshan,J. Appl. Phys. 73, 7643 (1993).
H. McD. Hobgood, R.C. Glass, G. Augustine, R.H. Hopkins, J. Jenny, M. Skowronski, W.C. Mitchel and M. Roth,Appl. Phys. Lett. 66 (11), 1364 (1995).
T.S. Sudarshan, G, Gradinaru, C.R. Li and V.P. Madangarli,Proc. 6th SDIO/ONR Puise Power Mtg. (Chicago, IL: 1993), p. 108.
G. Gradinaru, G. Korony, and T.S. Sudarshan,Conf. Record 21stlntl. Power Modulator Symp. (Costa Mesa, CA, 1994), p. 104.
G. Gradinaru, V.P. Madangarli and T.S. Sudarshan,IEEE Trans. Electron Dev. 41, 1233 (1994).
T.S. Sudarshan, G. Gradinaru and G. Korony, inTransactions of 2nd lntl. High Temperature Electronic Conf.—HiTEC (Charlotte, NC: 1994), vol. 2, p. P 147.
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Sudarshan, T.S., Gradinaru, G., Korony, G. et al. High field activation of micropipes in high resistivity silicon carbide. J. Electron. Mater. 25, 893–898 (1996). https://doi.org/10.1007/BF02666655
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DOI: https://doi.org/10.1007/BF02666655