Abstract
Elevated temperature (700°C) N ion implantations were performed into 6H-SiC in the energy range of 50 keV-4 MeV. By analyzing the as-implanted depth distributions, the range statistics of the N+ in 6H-SiC have been established over this energy range. Annealing at 1500 and 1600°C for 15 min resulted in Rutherford backscattering spectrometry scattering yields at the virgin crystal level, indicating a good recovery of the crystalline quality of the material without any redistribution of the dopant. A maximum electron concentration of 2 × 1019 cm−3, at room temperature, has been measured even for high-dose implants. The p-n junction diodes made by N ion implantation into a p-type substrate have a forward turn-on voltage of 2.2 V, an ideality factor of 1.90, and a reverse breakdown voltage of 125 V with nA range leakage current for -10 V bias at room temperature. By probing many devices on the same substrate we found uniform forward and reverse characteristics across the crystal.
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Gaedner, J., Rao, M.V., Holland, O.W. et al. Elevated temperature nitrogen implants in 6H-SiC. J. Electron. Mater. 25, 885–892 (1996). https://doi.org/10.1007/BF02666654
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DOI: https://doi.org/10.1007/BF02666654