Abstract
We grew a 1.3 μm strained-layer quantum well (SL-QW) laser with InGaP cladding layers on a lattice-relaxation buffer layer by metalorganic vapor phase epitaxy. For the lattice-relaxation buffer, we used a compositionally graded InGaAs/GaAs structure. The significantly reduced surface roughness of the InGaP cladding layers achieved by supplying a large amount of H2Se enables CW operation of our 1.3 μm SL-QW laser. We achieved a low threshold current of less than 10 mA and a high characteristic temperature of 100K around room temperature.
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Uchida, T., Kurakake, H., Soda, H. et al. A1.3 μm strained quantum well laser on a graded InGaAs buffer with a GaAs substrate. J. Electron. Mater. 25, 581–584 (1996). https://doi.org/10.1007/BF02666507
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DOI: https://doi.org/10.1007/BF02666507