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Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2

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Abstract

The dry etching characteristics of GaN were investigated using chemically assisted ion beam etching (CAIBE) with HCI and H2/Cl2 gas. Etch rates using CAIBE/HC1 were investigated as a function of Ar ion beam energy and substrate temperature. These results were compared to CAIBE/C12. Etch rates were also investigated for CAIBE/H2/Cl2 for various ratios of H2:C12. Highly anisotropic submicron lines are demonstrated using CAIBE/HC1. Auger electron spectroscopy was used to investigate surface stoichiometric changes of samples etched with CAIBE/HC1, CAIBE/H2/Cl2,, and CAIBE/C12. The diffusion of deuterium into GaN during etching was also investigated using secondary ion mass spectrometry.

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Authors and Affiliations

  1. Center for Compound Semiconductor Microelectronics, Material Research Laboratory, University of Illinois, 61801, Urbana-Champaign, IL

    A. T. Ping, A. C. Schmitz, M. Asif Khan & I. Adesida

  2. Department of Electrical and Computer Engineering, University of Illinois, 61801, Urbana-Champaign, IL

    A. T. Ping, A. C. Schmitz, M. Asif Khan & I. Adesida

  3. APA Optics, Inc., 55449, Blaine, MN

    M. Asif Khan

Authors
  1. A. T. Ping
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  2. A. C. Schmitz
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  3. M. Asif Khan
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  4. I. Adesida
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Ping, A.T., Schmitz, A.C., Asif Khan, M. et al. Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2 . J. Electron. Mater. 25, 825–829 (1996). https://doi.org/10.1007/BF02666643

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  • DOI: https://doi.org/10.1007/BF02666643

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