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Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs

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Abstract

We have studied the asymmetric broadening of the Raman spectra of InxGa1-xAsyP1-y grown on GaAs substrates by means of the spatial correlation model. The broadening phenomena was found to be enhanced in the region of immiscibility, in agreement with PL observations. In Raman measurements, the broadening is more enhanced in the samples grown on (100) substrates than in the samples grown on (111) substrates. The enhancement is attributed to the immiscibility included in the samples grown on (100) substrate.

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Authors and Affiliations

  1. Department of Electrical Engineering, Toyota College of Technology, 2-1 Eisei-cho, Toyota-shi, 471, Aichi, Japan

    Touko Sugiura & Nobuyasu Hase

  2. Department of Electronics, Nagoya University, Chikusa-ku, 464-01, Nagoya, Japan

    Kazumasa Hiramatsu & Nobuhiko Sawaki

Authors
  1. Touko Sugiura
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  2. Nobuyasu Hase
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  3. Kazumasa Hiramatsu
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  4. Nobuhiko Sawaki
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Sugiura, T., Hase, N., Hiramatsu, K. et al. Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs. J. Electron. Mater. 25, 695–699 (1996). https://doi.org/10.1007/BF02666526

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  • DOI: https://doi.org/10.1007/BF02666526

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