Abstract
InAlAs lattice-matched to InP is of great importance as a large bandgap material for various InP-based heterostructures device applications. However, growth of good quality InAlAs using metalorganic chemical vapor deposition (MOCVD) is relatively difficult due to the reactive nature of its aluminum sources. In this paper, we present the use of iron as a possible dopant to improve the electrical properties of MOCVD grown InAlAs. Time resolved photoreflectance was used to confirm the increase in trap levels with increased iron doping. The impact of iron doping on the electrical properties of devices was investigated using Pt-Schottky diodes fabricated on undoped and iron doped InAlAs materials. Low frequency noise measurements were also carried out to investigate the impact of iron incorporation on the noise characteristics of the devices. Although noise levels showed marginal difference between undoped and iron doped materials, iron doped InAlAs showed a Lorentzian component in the noise spectra which is not found in undoped materials. An activation energy of ∼0.77 eV was evaluated for traps introduced by iron incorporation using temperature dependent low frequency noise measurements.
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Hong, K., Pavlidis, D. & Séjalon, F. Material and electrical characteristics of iron doped Pt-lnAIAs schottky diodes grown by LP-MOCVD. J. Electron. Mater. 25, 627–632 (1996). https://doi.org/10.1007/BF02666514
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DOI: https://doi.org/10.1007/BF02666514