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Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization

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Abstract

A drastic decrease in the sheet carrier concentration of modulation-doped Al0.48In0.52As/Ga0.47In0.53As/InP heterostructures has been observed after O2 plasma treatment followed by thermal treatment up to 350°C. The decrease in sheet carrier concentration, which is speculated to be caused by both plasma damage and impurities penetrating from the surface of the epilayer, can be suppressed substantially by using PH3 plasma treatment prior to the O2 plasma and thermal treatments.

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Authors and Affiliations

  1. Central Research Laboratories, SHARP Corporation, 2613-1 Ichinomoto, Tenri, 632, Nara, Japan

    N. Takahashi, M. Shiota, Y. Zhu & M. Shimizu

  2. Department of Electrical Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, 565, Osaka, Japan

    D. Hirata, Y. Sakamoto, T. Sugino & J. Shirafujf

Authors
  1. N. Takahashi
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  2. M. Shiota
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  3. Y. Zhu
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  4. M. Shimizu
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  5. D. Hirata
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  6. Y. Sakamoto
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  7. T. Sugino
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  8. J. Shirafujf
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Takahashi, N., Shiota, M., Zhu, Y. et al. Thermal stability of Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure and its improvement by phosphidization. J. Electron. Mater. 25, 633–636 (1996). https://doi.org/10.1007/BF02666515

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  • DOI: https://doi.org/10.1007/BF02666515

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