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High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation

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Abstract

The highest electron mobility yet reported for an InP-based pseudomorphic structure at room temperature, 18300 cm2/V·s, has been obtained by using a structure with an indium composition modulated channel, namely, In0.53Ga0.47As/ In0.8Ga0.2As/InAs/In0.8Ga0.2As/In0.53Ga0.47As. Although the total thickness of the high In-content layers (In0.8Ga0.2As/InAs/In0.8Ga0.2As) exceeds the critical thick-ness predicted by Matthews theory, In0.8Ga0.2As insertion makes it possible to form smooth In0.53Ga0.47As/In0.8Ga0.2As and In0.8Ga0.2As/InAs heterointerfaces. This structure can successfully enhance carrier confinement in the high In-content layers. This superior carrier confinement can be expected to lead to the highest yet reported electron mobility.

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Authors and Affiliations

  1. Kansai Electronics Research Laboratories, NEC Corporation, 2-9-1 Seiran, Otsu, 520, Shiga, Japan

    T. Nakayama, H. Miyamoto, E. Oishi & N. Samoto

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  1. T. Nakayama
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  2. H. Miyamoto
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  3. E. Oishi
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  4. N. Samoto
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Nakayama, T., Miyamoto, H., Oishi, E. et al. High electron mobility 18300 cm2/V·s in the InAIAs/lnGaAs pseudomorphic structure obtained by channel indium composition modulation. J. Electron. Mater. 25, 555–558 (1996). https://doi.org/10.1007/BF02666502

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  • DOI: https://doi.org/10.1007/BF02666502

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