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Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion

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Abstract

We investigated impurity-induced disordering (IID) in AIGalnAs multi-quantum wells (MQWs) on InP substrate by Zn diffusion under low temperature conditions. Blue-shift of band-gap energy of lattice-matched AIGalnAs MQW on InP strongly depended on the temperature of Zn diffusion. The lattice-matched MQW was not completely disordered below 500°C. On the other hand, photoluminescence spectra from compressively strained AIGalnAs MQW, after disordering was independent of the temperature of Zn diffusion. Considerable disordering was observed in the strained MQW, which was saturated even at the low temperature of 400°C. The measured hole concentration of the Zn diffused layer at 400°C was as low as 3 × l018cm−3 The IID lasers were also fabricated and characterized. No significant increase in the optical loss due to the Zn diffusion was observed in these lasers.

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Author notes

  1. James L. Merz

    Present address: Department of Electrical Engineering, University of Notre Dame, 46556-5637, Notre Dame, IN

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, 93106, Santa Barbara, CA

    Kazuhiko Itaya, Mark J. Mondry, Philip D. Floyd, Larry A. Coldren & James L. Merz

Authors
  1. Kazuhiko Itaya
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  2. Mark J. Mondry
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  3. Philip D. Floyd
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  4. Larry A. Coldren
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  5. James L. Merz
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On leave from Toshiba Co., Japan.

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Itaya, K., Mondry, M.J., Floyd, P.D. et al. Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion. J. Electron. Mater. 25, 565–569 (1996). https://doi.org/10.1007/BF02666504

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  • DOI: https://doi.org/10.1007/BF02666504

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