Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure S. MonegerH. QiangT. F. Noble OriginalPaper Pages: 1341 - 1344
Structural characterization of oxide layers thermally grown on 3C-SiC films Q. WahabL. HultmanJ. -E. Sundgren OriginalPaper Pages: 1345 - 1348
Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing S. KalI. KaskoH. Ryssel OriginalPaper Pages: 1349 - 1355
Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge D. HahnO. JaschinskiM. Von Ortenberg OriginalPaper Pages: 1357 - 1361
Optical properties of annealed, single GaAs quantum wells: Cap doping and mask width dependence A. C. CrookD. V. ForbesC. M. Herzinger OriginalPaper Pages: 1363 - 1368
Ultra-shallow raised p+−n junctions formed by diffusion from selectively depositedIn-situ doped Si0.7Ge0.3 Douglas T. GriderMehmet C. ÖztürkDennis Maher OriginalPaper Pages: 1369 - 1376
Experimental determination of tie-lines in the Hg-Cd-Te system Hao-Chieh LiuR. F. Brebrick OriginalPaper Pages: 1377 - 1380
Conduction band offset of strained InGaP by quantum well capacitance-voltage profiling S. H. ParkM. MarkarianP. M. Asbeck OriginalPaper Pages: 1381 - 1386
High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition J. C. YenB. P. KellerU. K. Mishra OriginalPaper Pages: 1387 - 1390
Investigations on indium phosphide grown by chemical beam epitaxy RTH RongenM. R. LeysJ. H. Wolter OriginalPaper Pages: 1391 - 1398
Low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition S. W. ParkJ. Y. ShimH. K. Baik OriginalPaper Pages: 1399 - 1406
Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes F. M. SterankaD. C. DefevereM. G. Craford OriginalPaper Pages: 1407 - 1412
Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing Youn Tae KimChi Hoon JunSang-Koo Chung OriginalPaper Pages: 1413 - 1417
Plastic constraint of large aspect ratio solder joints John P. RanieriFrederick S. LautenDonald H. Avery OriginalPaper Pages: 1419 - 1423
Development of a solder material process to relieve the plastic constraint associated with thin joints Frederick S. LautenJohn P. RanieriDonald H. Avery OriginalPaper Pages: 1425 - 1428
The role of Cu-Sn intermetallics in wettability degradation H. L. ReynoldsJ. W. Morris OriginalPaper Pages: 1429 - 1434
Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition IL KimJong-Seok KimWon-Jong Lee OriginalPaper Pages: 1435 - 1441
Development of rf sputtered, Cu-doped ZnTe for use as a contact interface layer to p-CdTe T. A. GessertA. R. MasonP. Sheldon OriginalPaper Pages: 1443 - 1449
Thermodynamics and kinetics of hydrogen evolution in hydrogenated amorphous silicon films Nagarajan SridharDDL ChungJ. Coleman OriginalPaper Pages: 1451 - 1459
Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs D. C. LookZ. -Q. FangJ. R. Sizelove OriginalPaper Pages: 1461 - 1464
The effect of soldering process variables on the microstructure and mechanical properties of eutectic Sn-Ag/Cu solder joints Wenge YangLawrence E. FeltonRobert W. Messler OriginalPaper Pages: 1465 - 1472
Stress relaxation behavior of eutectic tin-lead solder E. W. HareR. G. Stang OriginalPaper Pages: 1473 - 1484
Effects of barrier layer and processing conditions on thin film Cu microstructure E. M. ZielinskiR. P. VinciJ. C. Bravman OriginalPaper Pages: 1485 - 1492
Intermetallic compound layer growth by solid state reactions between 58Bi-42Sn solder and copper P. T. ViancoA. C. KilgoR. Grant OriginalPaper Pages: 1493 - 1505
Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide Juho SongG. S. LeeP. K. Ajmera OriginalPaper Pages: 1507 - 1510
Selective silicon epitaxy by photo-chemical vapor deposition at a very low temperature of 160°C Akira YamadaTakaYuki OshimaKiyoshi Takahashi OriginalPaper Pages: 1511 - 1515