Skip to main content
Log in

Thermodynamics and kinetics of hydrogen evolution in hydrogenated amorphous silicon films

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Plasma Physics Corporation, P.O. Box 548, Locust Valley, NY 11650 The changes in enthalpy and entropy due to hydrogen evolution in hydrogenated amorphous silicon films were measured by differential scanning calorimetry (DSC). Hydrogen evolution was associated with an endothermic DSC peak, as supported by thermogravimetric analysis and evolved gas analysis. The en-thalpy and entropy changes of hydrogen evolution increased with heating rate and hydrogen content, because the evolution involved not only Si-H bond breaking, but also defect formation (such as Si-Si bond breaking), which was enhanced by a high flow of evolving hydrogen. In contrast, the activation energy of hydrogen evolution was controlled by the doping rather than the hydrogen content, because doping affected the Si-H bonding, which in turn affected the state before hydrogen evolution. Crystallization, which occurred at tempera-tures higher than hydrogen evolution, was delayed for the amorphous silicon film in a higher disordered state after hydrogen evolution, suggesting that hydrogen content influenced the crystallization process.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. D.E. Carlson and C.R. Wronski,Appl. Phys. Lett. 28, 671 (1976).

    Article  CAS  Google Scholar 

  2. D.E. Carlson,J. Non-Cryst. Solids 35/36, 707 (1980).

    Article  Google Scholar 

  3. Amorphous and Microcrystalline Semiconductor Devices- Optoelectronic Devices, ed. J. Kanicki, Chap. 3 (Boston: Artech, 1991).

    Google Scholar 

  4. E. Chartier, N. Szydlo, F. Boulitrop, N. Proust and J. Magarino,Mater. Res. Symp. Proc. S3, 453 (1986).

  5. D.L. Staebler and C.R. Wronski,Appl. Phys. Lett. 39, 292 (1977).

    Article  Google Scholar 

  6. R. Reif and J.E. Knott,Electron Lett. 17, 586 (1981).

    Article  CAS  Google Scholar 

  7. S. Morozumi, K. Oguchi, T. Misawa, R. Araki and H. Ohshima,SID 84 Dig. 316 (1984). Thermodynamics and Kinetics of Hydrogen Evolution in Hydrogenated Amorphous Silicon Films

  8. M. Yamano, H. Ikeda, H. Takesada, M. Yamasaki, Y. Okita, S. Sugibuchi and Y. Sasaki,3rd Int. Display Research Conf., Kobe, (Tokyo: Nippon Press, 1983), p. 214.

    Google Scholar 

  9. H.S. Yoon, C.S. Park and Sin-Chong Park,J. Vac. Sci. Technol. A 4 (6), 3095 (1986).

    Article  CAS  Google Scholar 

  10. M.K. Hatalis and D.W. Greve,IEEE Electron Device Lett. EDL-8, 361 (1987).

    CAS  Google Scholar 

  11. W. Beyer, H. Wagner and H. Mell,Solid State Comm. 39, 375 (1981).

    Article  CAS  Google Scholar 

  12. M. Kumeda, H. Komatsu and T. Shimizu,Thin Solid Films 129, 227 (1985).

    Article  CAS  Google Scholar 

  13. D.K. Beigelson, R.A. Street, C.C. Tsai and J.C. Knights,Phys. Rev. B 20, 4839 (1979).

    Article  Google Scholar 

  14. W. Beyer and H. Wagner,J. Appl. Phys. 53, 8745 (1982).

    Article  CAS  Google Scholar 

  15. W. Beyer and H. Wagner,J. Non-Cryst. Solids 59/60, 161 (1983).

    Article  Google Scholar 

  16. KZellama, P. Germain, S. Squelard, J. C. Bourgoin and P.A. Thomas,J. Appl. Phys. 50, 6995 (1979).

    Article  CAS  Google Scholar 

  17. L. Csepregi, E.F. Kennedy, T.J. Gallagher, J.W. Mayer and T.W. Sigmon,J. Appl. Phys. 48, 4234 (1977).

    Article  CAS  Google Scholar 

  18. R B. Iverson and R. Reif,J. Appl. Phys. 62, 1675 (1987).

    Article  CAS  Google Scholar 

  19. Y. Masaki, P.G. LeComber and A.G. Fitzgerald,J. Appl. Phys. 74, 129 (1993).

    Article  CAS  Google Scholar 

  20. J.C.C. Fan and H.J. Zeigler,Appl. Phys. Lett. 27, 224 (1974).

    Article  Google Scholar 

  21. A. Lietoila, A. Wakita, T.W. Sigmon and J.F. Gibbons,J. Appl. Phys. 53, 4399 (1982).

    Article  CAS  Google Scholar 

  22. D.E. Carlson, C.W. Magee and A.R. Triano,J. Electron. Soc. 126, 688 (1979).

    Article  CAS  Google Scholar 

  23. L. Battezzatti, F. Demichelis, C.F. Pirri, A. Tagliaferro and E. Tresso,J. Non-Cryst. Solids 137/138, 87 (1991).

    Article  Google Scholar 

  24. L. Battezzatti, F. Demichelis, C.F. Pirri and E. Tresso,Phys. B 176, 73 (1992).

    Article  Google Scholar 

  25. D.E. Carlson and C.W. Magee,Appl. Phys. Lett. 33, 81 (1978).

    Article  CAS  Google Scholar 

  26. W. Beyer, H. Wagner, J. Chevallier and K. Reichelt,Thin Solid Films 90, 145 (1982).

    Article  CAS  Google Scholar 

  27. CRC Handbook of Chemistry and Physics (West Palm Beach, FL: CRC, 1977).

  28. S. Roorda, S. Doom, W. C. Sinke, P.M. L.O. Scholte and E.van Loenen,Phys. Rev. Lett. 62, 1880 (1989).

    Article  CAS  Google Scholar 

  29. K. Zellama, P. Germain, S. Squelard, J. Monge and E. Ligeon,J. Non-Cryst. Solids 35/36, 225 (1980).

    Article  Google Scholar 

  30. E.P. Donovan, F. Spaepen, D. Turnbull, J.M. Poate and D.C. Jacobson,J. Appl. Phys. 57, 1795 (1985).

    Article  CAS  Google Scholar 

  31. D.C. Booth, D.D. Allred and B.O. Seraphin,J. Non-Cryst. Solids 35/36, 213 (1980).

    Article  Google Scholar 

  32. Nagarajan Sridhar, D.D.L. Chung, W.A. Anderson and J. Coleman,Mater. Res. Symp. Proc. 343, 697 (1994).

    CAS  Google Scholar 

  33. K. Nakazawa and K. Tanaka,J. Appl. Phys. 68, 1029 (1990).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Sridhar, N., Chung, D., Anderson, W.A. et al. Thermodynamics and kinetics of hydrogen evolution in hydrogenated amorphous silicon films. J. Electron. Mater. 24, 1451–1459 (1995). https://doi.org/10.1007/BF02655463

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02655463

Key words

Navigation