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Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge

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Abstract

The optical constants of InGaAs were determined as a function of electron concentration in the range from 1015 to 2 × 1019 cm−3 by reflectance- and transmission-spectroscopy. A pronounced shift of the fundamental absorption edge toward shorter wavelengths with increasing doping concentration was found. The experimental results can be satisfactorily explained by band-filling and band-gap shrinkage.

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Authors and Affiliations

  1. Institut für Halbleitertechnik, Technische Universität Braunschweig, Hans-Sommer-strasse 66, D-38106, Braunschweig, Germany

    D. Hahn, O. Jaschinski, H. -H. Wehmann & A. Schlachetzki

  2. Institut für Physik, Lehrstuhl Magnetotransport, Humboldt Universität Berlin, Invalidenstrasse 110, D-10115, Berlin, Germany

    M. Von Ortenberg

Authors
  1. D. Hahn
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  2. O. Jaschinski
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  3. H. -H. Wehmann
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  4. A. Schlachetzki
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  5. M. Von Ortenberg
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Hahn, D., Jaschinski, O., Wehmann, H.H. et al. Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge. J. Electron. Mater. 24, 1357–1361 (1995). https://doi.org/10.1007/BF02655448

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  • DOI: https://doi.org/10.1007/BF02655448

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