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Ultra-shallow raised p+−n junctions formed by diffusion from selectively depositedIn-situ doped Si0.7Ge0.3

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Abstract

In this paper, a novel raised p+−n junction formation technique is presented. The technique makes use ofin- situ doped, selectively deposited Si0.7Ge0.3 as a solid diffusion source. In this study, the films were deposited in a tungsten halogen lamp heated cold-walled rapid thermal processor using SiCl2H2, GeH4, and B2H6. The microstructure of the Si0.7Ge0.3 layer resembles that of a heavily defected epitaxial layer with a high density of misfit dislocations, micro-twins, and stacking faults. Conventional furnace annealing or rapid thermal annealing were used to drive the boron from thein- situ doped Si0.7Ge0.3 source into silicon to form ultra-shallow p+−n junctions. Segregation at the Si0.7Ge0.3/Si interface was observed resulting in an approximately 3:1 boron concentration discontinuity at the interface. Junction profiles as shallow as a few hundred angstroms were formed at a background concentration of 1017 cm−3.

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Author notes

  1. Douglas T. Grider

    Present address: Semiconductor Process and Design Center, Texas Instruments, Inc., 13536 North Central Expressway MS 461, 75243, Dallas, TX

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, North Carolina State University, Box 7911, 27695-7911, Raleigh, NC

    Douglas T. Grider, Mehmet C. Öztürk, Stanton P. Ashburn & Jimmie J. Wortman

  2. Department of Materials Science and Engineering, North Carolina State University, Box 7916, 27695-7916, NC

    Gari Harris & Dennis Maher

Authors
  1. Douglas T. Grider
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  2. Mehmet C. Öztürk
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  3. Stanton P. Ashburn
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  4. Jimmie J. Wortman
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  5. Gari Harris
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  6. Dennis Maher
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Grider, D.T., Öztürk, M.C., Ashburn, S.P. et al. Ultra-shallow raised p+−n junctions formed by diffusion from selectively depositedIn-situ doped Si0.7Ge0.3 . J. Electron. Mater. 24, 1369–1376 (1995). https://doi.org/10.1007/BF02655450

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  • DOI: https://doi.org/10.1007/BF02655450

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