Skip to main content
SpringerLink
Log in

Structural characterization of oxide layers thermally grown on 3C-SiC films

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

The oxidation of 3C-SiC films deposited on off-oriented Si(001) substrates by reactive magnetron sputtering has been studied. The oxidation was carried out using dry conditions at a temperature of 1200°C. The composition of the oxide layer was investigated by Auger electron spectroscopy (AES). The oxide layer was found to contain no C except for the region very close to the interface, and the stoichiometry was found to be close to that of SiO2. Cross-sectional transmis-sion electron microscopy (XTEM) showed the oxide layer to be completely amorphous, dense, and homogeneous with a uniform thickness. High-resolution XTEM imaging showed an atomically sharp SiO2/SiC interface.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S.U. Tang, W.B. Berry, R. Kwor, M.V. Zeller and L.G. Matus,J. Electrochem. Soc. 137, 221 (1990).

    Article  CAS  Google Scholar 

  2. K. Shibahara, S. Nishino and H. Matsunami,Jpn. J. Appl. Phys. 23, 862 (1984).

    Article  Google Scholar 

  3. R. Turan, Q. Wahab, L. Hultman, M. Willander and J.-E. Sundgren,Mater. Res. Soc. Symp. 339, (Pittsburgh, Pa: MRS, 1994), p. 157.

    Google Scholar 

  4. H.S. Kong, J.T. Glass and R.F. Davis,J. Appl. Phys. 64, 2672 (1988).

    Article  CAS  Google Scholar 

  5. Q. Wahab, M.R. Sardela, Jr., L. Hultman, A. Henry, M. Willander. E. Janz’en and J.-E. Sundgren,Appl. Phys. Lett. 65, 725 (1994).

    Article  CAS  Google Scholar 

  6. R.W. Kee, K.M. Geib, C.W. Wilmsen and D.K. Ferry,J. Vac. Sci. Technol. 15, 1520 (1978).

    Article  CAS  Google Scholar 

  7. J.M. Powers and G.A. Somorjai,Surf. Sci. 244, 39 (1991).

    Article  CAS  Google Scholar 

  8. G. Ervin,J. Am. Cerm. Soc. 41, 347 (1958).

    Article  CAS  Google Scholar 

  9. M.P. Seah and W.A. Dench,Surf. Interface Anal. 1, 2 (1979).

    Article  CAS  Google Scholar 

  10. B. Horentz, H.-J. Michel and J. Halbritter,J. Mat. Res. 9, 3088 (1994).

    Google Scholar 

  11. K. Shibahara, S. Nishino and H. Matsunami,Appl. Phys. Lett. 50, 1888 (1987).

    Article  CAS  Google Scholar 

  12. A. Powell, J.B. Petit, J.H. Edgir, I.G. Jenkins, L.G. Matus, W.J. Choyke, L. Clemen, M. Yoganathan, J.W. Yang and P. Pirouz,Appl. Phys. Lett. 59, 183 (1991).

    Article  CAS  Google Scholar 

  13. E.H. Nicollian and J.R. Brews,MOS (Metal Oxide Semicon- ductor) Physics and Thechnology (New York: Wiley, 1982.

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, Linköping Univerisity, S-581 83, Linköping, Sweden

    Q. Wahab, L. Hultman, M. Willander & J. -E. Sundgren

Authors
  1. Q. Wahab
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. L. Hultman
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. Willander
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. -E. Sundgren
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Wahab, Q., Hultman, L., Willander, M. et al. Structural characterization of oxide layers thermally grown on 3C-SiC films. J. Electron. Mater. 24, 1345–1348 (1995). https://doi.org/10.1007/BF02655446

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02655446

Key words

Search

Navigation