Abstract
The tantalum oxide thin films with a thickness of 14 nm were deposited at 95°C by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECRPECVD), and annealed at various temperatures (700∼850°C) in O2 and N2 ambients. The microstructure and composition of the tantalum oxide thin films and the growth of interfacial silicon oxide layer were investigated and were related to the electrical characteristics of the film. Annealing in an O2 ambient led to a high dielectric constant (εr(Ta2O5) = 24) as well as a small leakage current (Ebd = 2.3 MV/cm), which were due to the improved stoichiometry and the decreased impurity carbon content. Annealing in an N2 ambient resulted in poor and nonuniform leakage current characteristics. The as-deposited tantalum oxide films were crystallized into δ-Ta2O5 after annealing at above 750°C regardless of the ambient. The leakage current of the film abruptly increased after annealing at 850°C probably because of the stress caused by thermal expansion or contraction.
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K. Ohta, K. Yamda, R. Shimizu and Y. Tarui,IEEE Trans. Electron. Dev. ED-29, 369 (1982).
S. Tanimoto, M. Matusui, K. Kamisako, K. Kuroiwa and Y. LuiJ. Electrochem. Soc. 139, 320 (1992).
S. Kamiyama, Pierre-Yves Lesaicherre, A. Ishitani, A. Sakai, A Tanikaw and I. Nishiyama,Ext. Abs. 1992 Intl. Con. SSDM (Tsukuba, 1992) pp. 521, 523.
G.S. Oehrlein,J. Appl. Phys. 59, 1587 (1986).
Y. Nishioka, N. Homma, H. Shinriki, K. Mukai, K. Yamaguchi, A. Uchida, K. Higeta and K. Ogiue,IEEE Trans. Electron Dev. ED-34, 1957 (1987).
H. Shinriki and M. Nakata,IEEE Trans. Eletron Dev. 38, 455 (1991).
C. Isobe and M. Saitoh,Appl. Phys. Lett. 56, 907 (1990).
H. Shinriki, M. Hiratani, A. Nakao and S. Tachi,Ext. Abs. 1991 Intl. Conf. Solid State Device and Materials (Yokohama, 1991) pp. 198, 200.
JCPDS powder diffraction file (Joint committee on Powder Diffation Standards, 1974).
L.A. Davis, N.C. MacDonald, P.W. Palmberg, G.E. Riach and R.E. Weber,Handbook of Auger Electron Spectroscopy (Perkin Elmer Corp. Phys. Electr. Div., Eden Prairie, 1978) 2nd ed., p. 29.
W.E. Beadle, J.C.C. Tsai and R.D. Plummer,Quick Reference Manual for Silicon Integrated Circuit Technology (Wiley- Interscience publication, USA, 1985), p. 19.
S.I. Kimura, Y. Nishioka, A. Shintani and K. Mukai,J. Electrochem. Soc. 130, 2414 (1983).
G.S. Oehrlien, F.M. d’Heurle and A. Reisman,J. Appl. Phys. 55, 3715 (1984).
H. Shinriki, N. Nakata, Y. Nishioka and K. Mukai,1989 Symp. VLSI Technology, (1989), p. 25.
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Kim, I., Kim, JS., Kwon, OS. et al. Effects of annealing in O2 and N2 on the electrical properties of tantalum oxide thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition. J. Electron. Mater. 24, 1435–1441 (1995). https://doi.org/10.1007/BF02655461
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DOI: https://doi.org/10.1007/BF02655461