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Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure

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Abstract

Using contactless electroreflectance at 300 and 77K, we have studied the inter-subband transitions from a GaAlAs/InGaAs/GaAs/GaALAs step quantum well structure (small well inside a large well) consisting of two layers A (InxGa1−xAs) and B (GaAs) with widths LA and LB, respectively, bounded by two thick barrier regions of Gax AlyAs. By comparison of the observed spectral features with an envelope function calculation, including the effects of strain, we have been able to characterize the potential profile of the structure, i.e., LA, LB, x, and y. There is very good agreement between experiment and the intended materials param-eters. Such configurations are of considerable importance since (a) they form the basis for pseudomorphic high electron mobility transistors, and (b) also have applications in optoelectronics due to their large Stark shifts.

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Author notes

  1. T. F. Noble

    Present address: Fusion Semiconductor Systems, 7600 Standish Place, 20855, Rockville, MD

Authors and Affiliations

  1. Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of CUNY, 11210, Brooklyn, NY

    S. Moneger, H. Qiang & Fred H. Pollak

  2. Materials Science and Engineering Department, Johns Hopkins University, 21218, Baltimore, MD

    T. F. Noble

  3. Graduate School and University Center of the City University of New York, 10036, New York, NY

    Fred H. Pollak

Authors
  1. S. Moneger
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  2. H. Qiang
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  3. Fred H. Pollak
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  4. T. F. Noble
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Moneger, S., Qiang, H., Pollak, F.H. et al. Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure. J. Electron. Mater. 24, 1341–1344 (1995). https://doi.org/10.1007/BF02655445

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  • DOI: https://doi.org/10.1007/BF02655445

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